TLP750
TOSHIBA Photocoupler
GaAℓAs Ired + Photo IC
TLP750
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8−lead DIP.
TLP750 has no internal base connection, and is suitable for application in
noisy environmental conditions.
•
•
•
•
Switching speed: t
pHL
=0.3μs (typ.)
Switching speed: t
pLH
=0.5μs (typ.) (R
L
=1.9kΩ)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065: 2002,
Certificate No.8869
BS EN60950-1: 2002,
Certificate No.8870
•
•
Isolation voltage: 5000V
rms
(min)
Option(D4)type
VDE approved: DIN EN 60747-5-2,
Certificate No. 40009302
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
3
6
5
1
2
1
8
7
3
4
5
6
7
8
: N.C.
: Cathode
: N.C.
: Emitter
: Collector
: N.C.
: Cathode
2 : Anode
Unit: mm
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Pin Configuration
(top view)
(Note)
When a EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”
4
•
Creepage distance: 6.4mm (min)
Clearance: 6.4mm (min)
Insulation thickness: 0.4mm (min)
Schematic
I
CC
I
F
2
V
F
3
I
O
6
GND
5
V
O
8
V
CC
1
2007-10-01
TLP750
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Pulse forward current
LED
Peak transient forward
current
Reverse voltage
Diode power dissipation
(Note 4)
Output current
Peak output current
Detector
Output voltage
Supply voltage
Output power dissipation
(Note 5)
Operating temperature range
Storage temperature range
Lead solder temperature(10s)
(Note 6)
Isolation voltage
(AC, 1min., R.H=60%)
(Note 7)
(Note 1)
(Note 2)
(Note 3)
Symbol
I
F
I
FP
I
FPT
V
R
P
D
I
O
I
OP
V
O
V
CC
P
O
T
opr
T
stg
T
sol
BV
S
Rating
25
50
1
5
45
8
16
−0.5~15
−0.5~15
100
−55~100
−55~125
260
5000
Unit
mA
mA
A
V
mW
mA
mA
V
V
mW
°C
°C
°C
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Derate 0.8mA / °C above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width.
Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width
≤
1μs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
(Note 6) Soldering portion of lead: Up to 2mm from the body of the device.
(Note 7) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted
together.
2
2007-10-01
TLP750
Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Forward voltage
temperature coefficient
Reverse current
Capacitance between
terminal
Symbol
V
F
ΔV
F
/
ΔTa
I
R
C
T
I
OH(1)
Detector
High level output
current
I
OH(2)
I
OH
High level supply
voltage
I
CCH
I
F
=16mA
I
F
=16mA
V
R
=5V
V
F
=0, f=1MHz
I
F
=0mA, V
CC
=V
O
=5.5V
I
F
=0mA, V
CC
=V
O
=15V
I
F
=0mA, V
CC
=V
O
=15V
Ta=70°C
I
F
=0mA, V
CC
=15V
Ta=25°C
Current transfer ratio
I
O
/I
F
I
F
=16mA
V
CC
=4.5V
V
O
=0.4V
Rank: 0
Ta=0~70°C
Rank: 0
Low level output
voltage
Isolation resistance
Capacitance between
input to output
V
OL
R
S
C
S
I
F
=16mA, V
CC
=4.5V,
I
O
=1.1mA
(rank 0: I
O
=2.4mA)
R.H.=60%, V=5000V
DC
V
S
=0, f=1MHz
(Note 7)
(Note 8)
Test Condition
Min.
―
―
―
―
―
―
―
―
10
19
5
15
―
12
Typ.
1.65
−2
―
45
3
―
―
0.01
30
30
―
―
―
14
Max.
1.85
―
10
―
500
5
50
1
―
―
―
―
0.4
Unit
V
mV / °C
μA
pF
nA
μA
μA
μA
%
Coupled
V
1×10
―
10
―
―
Ω
pF
0.8
Switching Characteristics
(Ta = 25°C, V
CC
= 5V)
Characteristic
Propagation delay time
(H→L)
Propagation delay time
(L→H)
Common mode transient
immunity at logic high
output
Common mode transient
immunity at logic low
output
Symbol
Test
Cir−
cuit
Test Condition
I
F
=0→16mA, V
CC
=5V,
1
t
pLH
R
L
=4.1kΩ Rank 0: R
L
=1.9kΩ
I
F
=16→0mA, V
CC
=5V,
R
L
=4.1kΩ
Rank 0: R
L
=1.9kΩ
Min.
―
―
―
―
―
Typ.
0.2
0.3
1.0
0.5
1500
Max.
0.8
0.8
2.0
1.2
―
Unit
t
pHL
μs
μs
(Note 8)
C
MH
2
C
ML
I
F
=0mA, V
CM
=200V
p−p
R
L
=4.1kΩ
(Rank 0: R
L
=1.9kΩ)
I
F
=16mA, V
CM
=200V
p−p
R
L
=4.1kΩ
(Rank 0: R
L
=1.9kΩ)
V /
μs
―
−1500
―
V /
μs
(Note 8)
(Note 8) CML is the maximum rate of fall of the common mode voltage that can be sustained with the output voltage
in the logic low state(V
O
< 0.8V).
CMH is the maximum rate of rise of the common mode voltage that can be sustained with the output voltage
in the logic high state(V
O
> 2.0V).
(Note 9) Maximum electrostatic discharge voltage for any pins: 100V(C=200pF, R=0)
3
2007-10-01
TLP750
Test Circuit 1: Switching Time Test Circuit
Pulse
Input
PW=100μs
Duty ratio=1/10
I
F
Monitor
51Ω
I
F
1
2
3
4
8
7
6
5
R
L
V
O
Output
Monitor
V
O
1.5V
t
p
HL
t
p
LH
5V
1.5V
V
OL
V
CC
=5V
I
F
0
Test Circuit 2: Common Mode Noise Immunity Test Circuit
V
CC
=5V
1
I
F
2
3
4
8
7
6
5
V
CM
Pulse generator
Z
O
=50Ω
160
(
V
)
160
(
V
)
,CML
=
tr
(
μs
)
t f
(
μs
)
V
CM
R
L
V
O
Output
Monitor
V
O
(I
F=0mA)
V
O
(I
F=16mA)
t
r
90%
10%
t
f
200V
0V
5V
2V
0.8V
V
OL
CMH
=
4
2007-10-01
TLP750
100
30
I
F
– V
F
Ta = 25
℃
-2.6
ΔV
F
/ΔTa – I
F
10
3
1
0.3
0.1
0.03
0.01
1.0
Forward voltage temperature
coefficient
ΔV
F/ΔTa (mV/°C)
1.2
1.4
1.6
1.8
2.0
-2.4
(mA)
Forward current IF
-2.2
-2.0
-1.8
-1.6
-1.4
0.1
0.3
0.5
1
3
5
10
30
Forward voltage VF
(V)
Forward current IF
(mA)
300
I
OH(1)
– Ta
10
5
I
O
– I
F
VCC = 5 V
VO = 0.4 V
Ta = 25
℃
High level output current IOH (nA)
100
50
30
3
IO (mA)
Output current
1
0.5
0.3
0.1
0.05
0.03
10
5
3
1
0.6
0
40
80
120
160
0.01
0.1
0.3
1
3
10
30
100
300
Ambient temperature
Ta
(°C)
Forward current IF
(mA)
I
O
/I
F
– I
F
100
50
VCC = 5 V
VO = 0.4 V
1.2
I
O
/I
F
– Ta
1.0
Current transfer ratio
IO/IF (%)
30
Normalized IO/IF
Ta = -25℃
25℃
10
100℃
0.8
0.6
Normalized to:
IF = 16mA
VCC = 4.5V
0.2
VO = 0.4V
Ta = 25°C
5
3
0.4
1
0.3
0.5
1
3
5
10
30
50
0
-40
-20
0
20
40
60
80
100
Forward current IF
(mA)
Ambient temperature
Ta
(°C)
5
2007-10-01
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