BC441–5
MECHANICAL DATA
Dimensions in mm (inches)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
BIPOLAR NPN TRANSISTOR
FEATURES
4.19 (0.165)
4.95 (0.195)
• SILICON PLANAR EPITAXIAL NPN
TRANSISTORS
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
12.70
(0.500)
min.
• HERMETICALLY SEALED TO-39
PACKAGE
• CECC LEVEL SCREENING OPTIONS
• JAN LEVEL SCREENING OPTIONS
5.08 (0.200)
typ.
APPLICATIONS:
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
Hermetically sealed, the BC441 silicon planar
epitaxial NPN transistor is intended for
general purpose applications.
45˚
TO–39 PACKAGE
PIN 1 – Emitter
PIN 2 – Base
PIN 3 – Collector
Collector connected to Case.
The BC441 silicon planar epitaxial
NPN transistor is intended for
general purpose applications.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise stated)
V
CBO
V
CEO(sus)
V
CER
V
EBO
I
CM
I
BM
P
D
P
D
T
STG
T
J
Collector – Base Voltage
(I
E
= 0)
Collector – Emitter Voltage
(I
B
= 0)
Collector – Emitter Voltage
(R
BE
≤
100Ω)
Emitter – Base Voltage
(I
C
= 0)
Peak Collector Current
Peak Base Current
Total Device Dissipation
T
AMB
= 25°C
Total Device Dissipation
T
C
= 25°C
Storage Temperature Range
Maximum Junction Temperature
70V
60V
70V
5V
2A
1A
1W
10W
–65 to 200°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 4363
Issue 2
BC441–5
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C unless otherwise stated)
V
CE(sat)*
V
BE(sat)*
V
(BR)EBO
I
CBO
I
CER
h
FE
f
t
Parameter
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
Transition Frequency
Test Conditions
1
I
C
= 1A
I
B
= 100mA
I
C
= 1A
I
E
= 100µA
I
C
= 10mA
V
CB
= 40V
V
CE
= 50V
V
CE
= 4V
V
CE
= 4V
I
B
= 100mA
I
C
= 0
I
B
= 0
I
E
= 0
R
BE
= 100Ω
I
C
= 500mA
I
C
= 50mA
60
50
5
60
100
10
130
Min.
Typ.
Max.
1
1.5
Unit
V
V
V
V
nA
µA
—
MHz
V
CEO(sus)*
Collector – Emitter Voltage
* Pulse Test: t
p
= 300µs ,
δ
= 1%.
THERMAL CHARACTERISTICS
R
θJC
R
θJA
Parameter
Thermal Resistance Junction – Case
Thermal Resistance Junction – Ambient
Min.
Typ.
Max.
17.5
175
Unit
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 4363
Issue 2
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