BUK762R6-60E_15 datasheet, PDF

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BUK762R6-60E_15: DescriptionN-channel TrenchMOS standard level FET; File Size206KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK762R6-60E_15 Overview

N-channel TrenchMOS standard level FET

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BUK762R6-60E

13 July 2012

N-channel TrenchMOS standard level FET

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

•

AEC Q101 compliant

•

Repetitive avalanche rated

•

Suitable for thermally demanding environments due to 175 °C rating

•

True standard level gate with VGS(th) rating of greater than 1V at 175 °C

1.3 Applications

•

12 V Automotive systems

•

Electric and electro-hydraulic power steering

•

Motors, lamps and solenoid control

•

Start-Stop micro-hybrid applications

•

Transmission control

•

Ultra high performance power switching

1.4 Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 10 V; T

= 25 °C;

Fig. 1

= 25 °C;

Fig. 2

= 10 V; I

= 25 A; T

= 25 °C;

Fig. 11

= 25 A; V

= 48 V; V

= 10 V;

Fig. 13; Fig. 14

[1]

Continuous current is limited by package.

[1]

Min

Typ

Max

120

324

Unit

Static characteristics

drain-source on-state

resistance

1.97

2.6

mΩ

Dynamic characteristics

gate-drain charge

43.7

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