2SA1036K
PNP Silicon
Elektronische Bauelemente
A suffix of "-C" specifies halogen & lead-free
A
L
General Purpose Transistor
SC-59
Dim
A
B
C
D
D
Min
2.70
1.30
1.00
0.35
1.70
0.00
0.10
0.20
1.25
2.25
Max
3.10
1.70
1.30
0.50
2.30
0.10
0.26
0.60
1.65
3.00
FEATURES
S
2
3
Top View
B
1
n
n
n
RoHS Compliant Product
Large I
C
.
ICMax
.= -500 mA
Low V
CE(sat)
. Ideal for low-voltage operation.
H
G
H
C
K
J
G
J
K
L
S
COLLECTOR
MARKING : HP, HQ, HR
*
BASE
EMITTER
O
All Dimension in mm
MAXIMUM RATINGS* T
A
=25
C
unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Parameter
Value
-40
-32
-5
-500
200
-55~150
Units
V
V
V
mA
mW
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
unless
Test
otherwise
specified)
MIN
-40
-32
-5
-1
-1
82
390
-0.4
200
7
V
MHz
pF
TYP
MAX
UNIT
V
V
V
µA
µA
conditions
Ic=-100µA,I
E
=0
Ic=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-20V,I
E
=0
V
EB
=-4V,I
C
=0
V
CE
=-3V,I
C
=-10mA
I
C
=-100mA,I
B
=-10mA
V
CE
=-5V,I
C
=-20mA,f=100MHz
V
CB
=-10V,I
E
=0,f=1MHz
CLASSIFICATION OF
Rank
Range
http://www.SeCoSGmbH.com
h
FE
P
82 - 180
Q
120 - 270
R
180 - 390
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
2
2SA1036K
Elektronische Bauelemente
PNP Silicon
General Purpose Transistor
Electrical characteristic curves
01-Jun-2002 Rev. A
Page
2
of
2
Embedded System
京公网安备 11010802033920号
EEWORLD
