ZC899B datasheet, PDF - EEWORLD Datasheet

ZC899B: DescriptionVariable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.6pF C(T), 25V, Silicon, Hyperabrupt, DO-7,; CategoryDiscrete semiconductor diode; File Size77KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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ZC899B Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.6pF C(T), 25V, Silicon, Hyperabrupt, DO-7,

Parameter Name	Attribute value
Maker	API Technologies
Objectid	1483262263
package instruction	O-LALF-W2
Reach Compliance Code	compliant
ECCN code	EAR99
compound_id	6026088
Other features	3% MATCHED SETS ARE AVAILABLE
Minimum breakdown voltage	25 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	4
Nominal diode capacitance	6.6 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 code	DO-7
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	250
Maximum repetitive peak reverse voltage	25 V
Maximum reverse current	2e-8 µA
Reverse test voltage	20 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Varactor Diode Classification	HYPERABRUPT

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