BUK7510-100B_15 datasheet, PDF

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BUK7510-100B_15: DescriptionN-channel TrenchMOS standard level FET; File Size182KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK7510-100B_15 Overview

N-channel TrenchMOS standard level FET

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BUK7510-100B

N-channel TrenchMOS standard level FET

Rev. 4 — 4 January 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits



Low conduction losses due to low

on-state resistance



Q101 compliant



Suitable for standard level gate drive

sources



Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications



12 V, 24 V and 42 V loads



Automotive systems



General purpose power switching



Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

drain-source voltage

drain current

Conditions

≥

25 °C; T

≤

175 °C

= 10 V; T

= 25 °C;

see

Figure 1;

see

Figure 3

= 25 °C;

see

Figure 2

= 10 V; I

= 25 A;

= 25 °C;

see

Figure 11;

see

Figure 12

[1]

Min

Typ

Max Unit

100

tot

total power dissipation

300

Static characteristics

DSon

drain-source on-state

resistance

8.6

mΩ

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