D2
PA
K
BUK7626-100B
N-channel TrenchMOS standard level FET
Rev. 2 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max Unit
100
49
157
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
-
22
26
mΩ
NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
Quick reference data
…continued
Parameter
Conditions
Min
-
Typ
-
Max Unit
144
mJ
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
non-repetitive
I
D
= 49 A; V
sup
≤
100 V;
drain-source
R
GS
= 50
Ω;
V
GS
= 10 V;
avalanche energy T
j(init)
= 25 °C; unclamped
gate-drain charge V
GS
= 10 V; I
D
= 25 A;
V
DS
= 80 V; T
j
= 25 °C;
see
Figure 13
Dynamic characteristics
Q
GD
-
13
-
nC
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
[1]
source
mounting base; connected to
drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
[1]
It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7626-100B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
Type number
BUK7626-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 2 February 2011
2 of 13
NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 49 A; V
sup
≤
100 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
100
100
20
49
34
197
157
175
175
49
197
144
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
60
I
D
(A)
03nm45
120
P
der
(%)
80
03na19
40
20
40
0
0
50
100
150
T
mb
(
°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
BUK7626-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 2 February 2011
3 of 13
NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
03nm43
Limit R
DSon
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
10
DC
1 ms
10 ms
100 ms
1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
minimum footprint; mounted on
a printed-circuit board
Min
-
-
Typ
-
-
Max
0.95
50
Unit
K/W
K/W
1
03nm44
δ
= 0.5
Z
th(j-mb)
(K/W)
10
−1
0.2
0.1
0.05
0.02
10
−2
P
single shot
δ
=
t
p
T
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7626-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 2 February 2011
4 of 13
NXP Semiconductors
BUK7626-100B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11;
see
Figure 12
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from drain lead 6 mm from package to
centre of die; T
j
= 25 °C
from upper edge of drain mounting base
to centre of die; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from source lead 6 mm from package to
source bond pad; T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
I
D
= 25 A; V
DS
= 80 V; V
GS
= 10 V;
T
j
= 25 °C; see
Figure 13
-
-
-
-
-
-
-
-
-
-
-
-
-
38
9
13
2168
238
102
21
40
47
19
4.5
2.5
7.5
-
-
-
2891
286
140
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
100
89
1
2
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.02
2
2
-
22
Max
-
-
-
4
4.4
500
1
100
100
65
26
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
94
115
1.2
-
-
V
ns
nC
BUK7626-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 2 February 2011
5 of 13
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