BUK9675-55A_15 datasheet, PDF - EEWORLD Datasheet

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BUK9675-55A_15: DescriptionN-channel TrenchMOS logic level FET; File Size200KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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N-channel TrenchMOS logic level FET

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BUK9675-55A

N-channel TrenchMOS logic level FET

Rev. 2 — 8 February 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Low conduction losses due to low

on-state resistance

Suitable for logic level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Automotive and general purpose

power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

tot

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

Conditions

≥

25 °C; T

≤

175 °C

= 5 V; T

= 25 °C;

see

Figure 1;

see

Figure 3

= 25 °C; see

Figure 2

Min

Typ

Max Unit

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