SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent
h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
・Low
Noise : NF=1dB(Typ.), 10dB(Max.).
・Complementary
to KTA2014E.
・Small
Package.
KTC4075E
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
60
50
5
150
30
100
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=2mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=1mA
V
CB
=10V, I
E
=0, f=1MHz
V
CE
=6V, I
C
=0.1mA,
f=1kHz, Rg=10kΩ
Note : h
FE
Classification O(2):70½140, Y(4):120½240, GR(6):200½400,
BL(8):350~700
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
0.1
-
2.0
1.0
MAX.
0.1
0.1
700
0.25
-
3.5
10
V
MHz
pF
dB
UNIT
μ
A
μ
A
2014. 3. 31
Revision No : 2
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