HAT2265H
Silicon N Channel Power MOS FET Power Switching
Rev.1.00
Jun.06.2005
Features
•
High speed switching
•
Capable of 4.5 V gate drive
•
Low drive current
•
High density mounting
•
Low on-resistance
R
DS(on)
= 2.5 mΩ typ. (at V
GS
= 10 V)
Outline
LFPAK
5
5
D
3
1 2
4
4
G
1, 2, 3 Source
4
Gate
5
Drain
S S S
1 2 3
Rev.1.00, Jun.06.2005, page 1 of 10
HAT2265H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
Note 2
Note 2
Note3
Note1
Ratings
30
±20
55
220
55
30
90
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
E
AR
Pch
θch-C
Tch
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Rev.1.00, Jun.06.2005, page 2 of 10
HAT2265H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol Min
V
(BR)DSS
30
Typ
—
—
—
—
—
2.5
3.4
100
5180
1200
380
0.5
33
15
7.1
13
65
60
9.5
0.81
40
Max
—
—
± 10
1
2.5
3.3
5.3
—
—
—
—
—
—
—
—
—
—
—
—
1.06
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nc
nc
nc
ns
ns
ns
ns
V
ns
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 55 A
V
GS
= 10 V, I
D
= 27.5 A
V
DD
≅
10 V
R
L
= 0.36
Ω
Rg = 4.7
Ω
IF = 55 A, V
GS
= 0
Note4
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
µA,
V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 27.5 A, V
GS
= 10 V
I
D
= 27.5 A, V
DS
= 10 V
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Note4
Note4
V
(BR)GSS
± 20
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
—
1.6
—
—
60
—
—
—
—
—
—
—
—
—
—
—
—
—
I
D
= 27.5 A, V
GS
= 4.5 V
Note4
IF = 55 A, V
GS
= 0
diF/ dt = 100 A/ µs
Rev.1.00, Jun.06.2005, page 3 of 10
HAT2265H
Main Characteristics
Power vs. Temperature Derating
40
Pch (W)
I
D
(A)
Maximum Safe Operation Area
500
100
DC
10
30
PW
10
Channel Dissipation
Drain Current
1m
s
=1
0m
Op
era
s
tio
n
10
µ
0
µ
s
s
20
10
1 Operation in
this area is
limited by R
DS(on)
0.1
0.01
0.1 0.3
1
3
10
30
100
Drain to Source Voltage V
DS
(V)
Tc = 25°C
1 shot Pulse
0
50
100
150
Tc (°C)
200
Case Temperature
Typical Output Characteristics
100
10 V
4.5 V
Pulse Test
100
3.0 V
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
80
I
D
(A)
80
2.8 V
60
2.6 V
40
2.4 V
I
D
Drain Current
60
25°C
Tc = 75°C
-25°C
Drain Current
40
20
20
V
GS
= 2.2 V
0
2
4
6
Drain to Source Voltage
8
V
DS
(V)
10
0
1
2
3
Gate to Source Voltage
4
V
GS
(V)
5
Rev.1.00, Jun.06.2005, page 4 of 10
HAT2265H
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
V
DS(on)
(mV)
200
Drain to Source On State Resistance
R
DS(on)
(m
Ω
)
250
5
V
GS
= 4.5 V
10 V
2
Drain to Source Voltage
150
I
D
= 50 A
100
20 A
10 A
0
4
8
12
Gate to Source Voltage
16
20
V
GS
(V)
50
1
1
3
10
100 300
30
Drain Current I
D
(A)
1000
Static Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
6
I
D
= 10 A, 20 A
50 A
4 V
GS
= 4.5 V
Forward Transfer Admittance vs.
Drain Current
1000
300
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
V
DS
= 10 V
Pulse Test
10
30
100
25°C
75°C
Tc = -25°C
2
10 V
0
-25
10 A, 20 A, 50 A
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Drain Current I
D
(A)
Rev.1.00, Jun.06.2005, page 5 of 10
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