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2N3382

Description
TRANSISTOR,JFET,P-CHANNEL,30MA I(DSS),TO-72
CategoryDiscrete semiconductor    The transistor   
File Size91KB,1 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2N3382 Overview

TRANSISTOR,JFET,P-CHANNEL,30MA I(DSS),TO-72

2N3382 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Code_compli
FET technologyJUNCTION
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.3 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

2N3382 Related Products

2N3382 PN4091 PN5116 PN5432 PN5434 PN5433 PN4092
Description TRANSISTOR,JFET,P-CHANNEL,30MA I(DSS),TO-72 TRANSISTOR,JFET,N-CHANNEL,30MA I(DSS),TO-92 PN5116 TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,150MA I(DSS),TO-92 TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,30MA I(DSS),TO-92 TRANSISTOR,JFET,N-CHANNEL,25V V(BR)DSS,100MA I(DSS),TO-92 TRANSISTOR,JFET,N-CHANNEL,15MA I(DSS),TO-92
Reach Compliance Code _compli not_compliant compliant compliant compliant compliant compli
FET technology JUNCTION JUNCTION - JUNCTION JUNCTION JUNCTION JUNCTION
Maximum operating temperature 150 °C - - 150 °C 150 °C 150 °C -
Polarity/channel type P-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.3 W 0.36 W - 0.3 W 0.3 W 0.3 W 0.36 W
surface mount NO NO - NO NO NO NO
Maker - - Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
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