1N6461US – 1N6468US
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
DESCRIPTION
This surface mount series of 500 watt voidless hermetically sealed unidirectional Transient
Voltage Suppressors (TVS) are military qualified to MIL-PRF-19500/551 and are ideal for
high-reliability applications where a failure cannot be tolerated. Working peak “standoff”
voltages are available from 5.0 to 51.6 volts.
They are very robust, using a hard glass casing
and internal Category 1 metallurgical bonds.
These devices are also available in axial-leaded
packages for thru-hole mounting.
Important:
For the latest information, visit our website
http://www.microsemi.com.
“B” SQ-MELF
Package
FEATURES
•
•
•
•
•
•
•
•
Surface mount equivalent of JEDEC registered 1N6461 thru 1N6468 series.
Available as 500 watt peak pulse power (P
PP
).
Working peak “standoff” voltage (V
WM
) from 5.0 to 51.6 volt.
High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
Triple-layer passivation.
Internal “Category
1”
metallurgical bonds.
Voidless hermetically sealed glass package.
JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 is also available.
(See
part nomenclature
for all available options.)
•
RoHS compliant versions available (commercial grade only).
Also available in:
“B” Package
(axial –leaded)
1N6461 - 1N6468
APPLICATIONS / BENEFITS
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•
•
•
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•
Military and other high-reliability applications.
Extremely robust construction.
ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
Protection from secondary effects of lightning per select levels in IEC61000-4-5.
Square-end-cap terminals for easy placement.
Nonsensitive to ESD per MIL-STD-750 method 1020.
Inherently radiation hard as described in Microsemi “MicroNote
050”.
MAXIMUM RATINGS @ 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Endcap
Forward Surge Current @ 8.3 ms half-sine
Forward Voltage @ 1 Amp
Peak Pulse Power @ 10/1000
µs
(1)
Reverse Power Dissipation
Solder Temperature @ 10 s
Notes:
1. Derate at 50 mW/
o
C (see
figure 4).
Symbol
T
J
and T
STG
R
ӨJEC
I
FSM
V
F
P
PP
P
R
Value
-55 to +175
20
80
1.5
500
2.5
260
Unit
o
C
ºC/W
A
V
W
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
W
C
T4-LDS-0286-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 1 of 6
1N6461US – 1N6468US
MECHANICAL and PACKAGING
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•
•
•
•
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•
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available for commercial grade only.
MARKING: Body paint and part number.
POLARITY: Cathode band.
TAPE & REEL option: Standard per EIA-296. Contact factory for quantities.
WEIGHT: Approximately 750 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
CDS (reference JANS)
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N6461
US
e3
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
MELF Package
Symbol
α
V(BR)
V
(BR)
V
WM
I
D
I
PP
V
C
P
PP
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature expressed in %/°C or mV/°C.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Rated working standoff voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage
that may be continuously applied over the standard operating temperature.
Standby Current: The current through the device at rated stand-off voltage.
Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse
current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an
external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
T4-LDS-0286-1, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
Page 2 of 6
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