IS61VF51236A IS61VF102418A
IS61LF51236A IS61LF102418A
512K x 36, 1024K x 18
18M SYNCHRONOUS FLOW-THROUGH
STATIC RAM
ISSI
®
ADVANCE INFORMATION
DECEMBER 2002
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: V
DD
3.3V + 5%, V
DDQ
3.3V/2.5V + 5%
VF: V
DD
2.5V + 5%, V
DDQ
2.5V + 5%
• JEDEC 100-Pin TQFP, 119-pin PBGA, and
165-pin PBGA package.
DESCRIPTION
The
ISSI
IS61LF/VF51236A and IS61LF/VF102418A are
high-speed, low-power synchronous static RAMs designed
to provide burstable, high-performance memory for commu-
nication and networking applications. The IS61LF/
VF51236A is organized as 524,288 words by 36 bits and
the IS61LF/VF102418A is organized as 1,048,576 words
by 18 bits. Fabricated with
ISSI
's advanced CMOS tech-
nology, the device integrates a 2-bit burst counter, high-
speed SRAM core, and high-drive capability outputs into
a single monolithic circuit. All synchronous inputs pass
through registers controlled by a positive-edge-triggered
single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
12/10/02
Rev. 00A
1
IS61VF51236A IS61VF102418A IS61LF51236A IS61LF102418A
119 BGA PACKAGE PIN CONFIGURATION-
512K
X
36 (TOP VIEW)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
2
A
A
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
TMS
3
A
A
A
Vss
Vss
Vss
BWc
Vss
NC
Vss
BWd
Vss
Vss
Vss
MODE
A
TDI
4
ADSP
ADSC
V
DD
NC
CE
OE
ADV
GW
V
DD
CLK
NC
BWE
A
1
*
A
0
*
V
DD
A
TCK
5
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
TDO
6
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
7
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
ISSI
®
Note:
* A
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE
BWE
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance.
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Byte Write Enable
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQd
DQPa-Pd
V
DD
V
DDQ
Vss
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Power Supply
Output Power Supply
Ground
BWx
(x=a-d) Synchronous Byte Write Controls
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00A
12/10/02