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IS61VF51236-7.5B3I

Description
Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165
Categorystorage    storage   
File Size163KB,29 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS61VF51236-7.5B3I Overview

Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, PLASTIC, BGA-165

IS61VF51236-7.5B3I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIntegrated Silicon Solution ( ISSI )
Parts packaging codeBGA
package instructionBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time7.5 ns
Other featuresFLOW-THROUGH ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee0
memory density18874368 bit
Memory IC TypeCACHE SRAM
memory width36
Number of functions1
Number of terminals165
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum supply voltage (Vsup)2.625 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
IS61VF51236A IS61VF102418A
IS61LF51236A IS61LF102418A
512K x 36, 1024K x 18
18M SYNCHRONOUS FLOW-THROUGH
STATIC RAM
ISSI
®
ADVANCE INFORMATION
DECEMBER 2002
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
sion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: V
DD
3.3V + 5%, V
DDQ
3.3V/2.5V + 5%
VF: V
DD
2.5V + 5%, V
DDQ
2.5V + 5%
• JEDEC 100-Pin TQFP, 119-pin PBGA, and
165-pin PBGA package.
DESCRIPTION
The
ISSI
IS61LF/VF51236A and IS61LF/VF102418A are
high-speed, low-power synchronous static RAMs designed
to provide burstable, high-performance memory for commu-
nication and networking applications. The IS61LF/
VF51236A is organized as 524,288 words by 36 bits and
the IS61LF/VF102418A is organized as 1,048,576 words
by 18 bits. Fabricated with
ISSI
's advanced CMOS tech-
nology, the device integrates a 2-bit burst counter, high-
speed SRAM core, and high-drive capability outputs into
a single monolithic circuit. All synchronous inputs pass
through registers controlled by a positive-edge-triggered
single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either
ADSP
(Address Status
Processor) or
ADSC
(Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the
ADV
(burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
t
KQ
t
KC
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
12/10/02
Rev. 00A
1
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