IDT6168LA10P datasheet, PDF - EEWORLD Datasheet

IDT6168LA10P: DescriptionStandard SRAM, 4KX4, 10ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20; Categorystorage storage; File Size251KB，9 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT6168LA10P Overview

Standard SRAM, 4KX4, 10ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	DIP,
Contacts	20
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	10 ns
JESD-30 code	R-PDIP-T20
JESD-609 code	e0
length	26.1874 mm
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	20
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4KX4
Exportable	NO
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum seat height	4.191 mm
Minimum standby current	2 V
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	7.62 mm

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