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ZTX1053ASTOB

Description
Small Signal Bipolar Transistor, 3A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size189KB,4 Pages
ManufacturerDiodes Incorporated
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ZTX1053ASTOB Overview

Small Signal Bipolar Transistor, 3A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

ZTX1053ASTOB Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage75 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz

ZTX1053ASTOB Preview

NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3– JANUARY 1995
FEATURES
* V
CEO
=75V
* 3 Amp Continuous Current
* 10 Amp Pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuits
* DC-DC Convertors
ZTX1053A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
ZTX1053A
150
75
5
10
3
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C
ZTX1053A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
MIN.
150
150
75
150
5
TYP.
245
245
100
245
8.8
0.3
0.3
0.3
17
120
180
900
825
260
300
100
420
450
150
15
140
21
90
750
30
10
10
10
25
150
250
1000
950
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=100µA
IC=100µA
IC=10mA
IC=100µA, V
EB
=1V
I
E
=100µA
V
CB
=120V
V
EB
=4V
VCES=120V
I
C
=0.2A, I
B
=20mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=100mA*
I
C
=3A, I
B
=100mA*
IC=3A, V
CE
=2V*
I
C
=10mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
MHz
pF
ns
ns
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=2A, I
B
=20mA, V
CC
=50V
I
C
=2A, I
B
=±20mA, V
CC
=50V
Collector-Emitter Saturation V
CE(sat)
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
1200
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
2%
ZTX1053A
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
0.2
I
C
/I
B
=10
I
C
/I
B
=30
I
C
/I
B
=100
+25°C
0.8
0.6
0.4
0.2
I
C
/I
B
=30
-55°C
+25°C
+100°C
+175°C
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
V
CE(sat)
v I
C
V
CE(sat)
v I
C
700 V
CE
=2V
600
500
400
300
200
100
1mA
10mA
1.0 I
C
/I
B
=30
+100°C
+25°C
0.8
0.6
-55°C
+25°C
+100°C
+175°C
-55°C
0.4
0.2
100mA
1A
10A
1mA
10mA
100mA
1A
10A
I
C
-Collector Current
I
C
-Collector Current
h
FE
v I
C
V
BE(sat)
v Ic
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=2V
10
Single Pulse Test Tamb=25C
-55°C
+25°C
+100°C
+175°C
1
0.1
DC
1s
100ms
10ms
1ms
100us
1mA
10mA
100mA
1A
10A
0.01
0.1V
1V
10V
100V
I
C
-Collector Current
V
CE
- Collector Voltage
V
BE(on)
v I
C
Safe Operating Area
ZTX1053A
180
1.0
D=1(D.C)
t1
160
140
Max Power Dissipation - (Watts)
120
100
tp
D=t1
tp
0.75
Am
t
en
bi
D=0.5
m
te
0.50
80
ra
pe
D=0.2
60
D=0.1
D=0.05
re
tu
40
0.25
20
Single Pulse
0
0.1ms
1ms
10ms
100ms
1s
10s
100s
-40
0
40
80
120
160
200
Pulse Width
T -Temperature
(°C)
Transient Thermal Resistance
SPICE PARAMETERS
*ZETEX ZTX1053A Spice model Last revision 19/01/95
Derating curve
*
.MODEL ZTX1053A NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+
+
+
+
*
ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
©
1995 ZETEX PLC
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
87 Modular Avenue
Commack NY11725
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road, Kwai Fong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1995
©
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.

ZTX1053ASTOB Related Products

ZTX1053ASTOB ZTX1053ASTOA
Description Small Signal Bipolar Transistor, 3A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 3A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
Maker Diodes Incorporated Diodes Incorporated
Parts packaging code TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3
Reach Compliance Code unknown compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 75 V 75 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JESD-30 code O-PBCY-W3 O-PBCY-W3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface MATTE TIN Matte Tin (Sn)
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz
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