ZDT751 datasheet, PDF - EEWORLD Datasheet

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ZDT751: DescriptionPower Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN; CategoryDiscrete semiconductor The transistor; File Size85KB，3 Pages; ManufacturerDiodes Incorporated

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ZDT751 Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN

ZDT751 Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	SOT-223
package instruction	SOT-223, 8 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	60 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	140 MHz

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SM-8 DUAL PNP MEDIUM POWER

TRANSISTORS

ISSUE 1 - AUGUST 1997

ZDT751

PARTMARKING DETAIL – T751

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

stg

VALUE

-80

-60

-5

-6

-2

-55 to +150

UNIT

°C

THERMAL CHARACTERISTICS

PARAMETER

Total Power Dissipation at T

amb

= 25°C*

Any single die “on”

Both die “on” equally

Derate above 25°C*

Any single die “on”

Both die “on” equally

Thermal Resistance - Junction to Ambient*

Any single die “on”

Both die “on” equally

SYMBOL

tot

2.25

2.75

55.6

45.5

mW/ °C

°C/ W

VALUE

UNIT

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)

Fax: (44)161-627 5467

Zetex GmbH

Streitfeldstraße 19

D-81673 München

Germany

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

Zetex Inc.

47 Mall Drive, Unit 4

Commack NY 11725

USA

Telephone: (516) 543-7100

Fax: (516) 864-7630

Zetex (Asia) Ltd.

3510 Metroplaza, Tower 2

Hing Fong Road,

Kwai Fong, Hong Kong

Telephone:(852) 26100 611

Fax: (852) 24250 494

These are supported by

agents and distributors in

major countries world-wide

Zetex plc 1997

Internet:

http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied

or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or

services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any

product or service.

ZDT751 Related Products

	ZDT751	UZDT751
Description	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN	Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN
Maker	Diodes Incorporated	Diodes Incorporated
Parts packaging code	SOT-223	SOT-223
package instruction	SOT-223, 8 PIN	SMALL OUTLINE, R-PDSO-G8
Contacts	3	3
Reach Compliance Code	unknown	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	8	8
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	MATTE TIN	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	140 MHz	140 MHz

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