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ZDT751TA

Description
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN
CategoryDiscrete semiconductor    The transistor   
File Size89KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZDT751TA Overview

Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN

ZDT751TA Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-223
package instructionSOT-223, 8 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time15 weeks
Maximum collector current (IC)2 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ISSUE 1 - AUGUST 1997
ZDT751
C
1
C
1
C
2
C
2
PARTMARKING DETAIL – T751
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
VALUE
-80
-60
-5
-6
-2
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
SYMBOL
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
VALUE
UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
©
Zetex plc 1997
Internet:
http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.

ZDT751TA Related Products

ZDT751TA ZDT751TC
Description Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SOT-223, 8 PIN
Maker Diodes Incorporated Diodes Incorporated
Parts packaging code SOT-223 SOT-223
package instruction SOT-223, 8 PIN SMALL OUTLINE, R-PDSO-G8
Contacts 3 3
Reach Compliance Code not_compliant unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 40 40
JESD-30 code R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 2 2
Number of terminals 8 8
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) MATTE TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 140 MHz 140 MHz

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