ZTX653LCC4
NPN TRANSISTOR IN A
HERMETICALLY SEALED CERAMIC
SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
1.27 (0.050)
1.07 (0.040)
9.14 (0.360)
8.64 (0.340)
12 13 14 15 16
1.39 (0.055)
1.02 (0.040)
≈
2.16 (0.085)
FEATURES
• SILICON PLANAR NPN TRANSISTOR
• HERMETIC SURFACE MOUNT PACKAGE
11
7.62 (0.300)
7.12 (0.280)
17
18
1
2
0.76 (0.030)
0.51 (0.020)
10
9
8
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVEL OPTIONS
7
6
5
4
3
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
Rad.
0.08 (0.003)
1.39 (0.055)
1.15 (0.045)
0.43 (0.017)
0.18 (0.007 Rad.
LCC4 PACKAGE
Underside View
BASE
COLLECTOR
EMITTER
4,5
1,2,15,16,17,18
6,7,8,9,10,11,12,13
ABSOLUTE MAXIMUM RATINGS PER SIDE
(T
C
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
P
TOT
T
j
T
STG
R
q
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Power Dissipation @ T
amb
= 25°C
Derate above 25°C
Operating And Storage Temperature Range
Junction - Ambient Thermal Resistance
120V
100V
5V
2A
2W
16mW/°C
–55 to 150°C
62.5°C/W
J-A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 5/00
Issue 2
ZTX653LCC4
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise stated)
Parameter
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Cut-off Current
Emitter Cut-off Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
Base – Emitter Turn-On Voltage
Test Conditions
I
C
= 100
m
A
I
E
= 100
m
A
V
CB
= 100V
T
C
= 100°C
V
EB
= 4V
I
C
= 1A
I
C
= 2A
I
C
= 1A
I
C
= 1A
I
C
= 50mA
I
C
= 500mA
I
C
= 1A
I
C
= 2A
I
B
= 100mA*
I
B
= 200mA*
I
B
= 100mA*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
V
CE
= 2V*
Min.
120
100
5
Typ.
Max. Unit
V
V
V
0.1
10
0.1
m
Collector – Emitter Breakdown Voltage I
C
= 10mA
A
A
m
0.13
0.23
0.9
0.8
70
100
55
25
200
200
110
55
0.3
0.5
1.25
1.0
300
V
V
V
H
FE
DC Current Gain
—
* Pulse test tp = 300ms ,
d £
2%
DYNAMIC CHARACTERISTICS
Parameter
f
T
C
obo
T
on
T
off
Transition Frequency
Output Capacitance
Switching Times
Switching Times
(T
A
= 25°C unless otherwise stated)
Test Conditions
I
C
= 100mA
V
CB
= 10V
V
CE
= 5V
f = 1.0MHz
f = 100MHz
Min.
140
Typ.
175
Max. Unit
MHz
30
pF
ns
I
C
= 500mA V
CC
= 10V
I
B1
=I
B2
=50mA
80
1200
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Prelim. 5/00
Issue 2
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