PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX752
ZTX753
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX752
-100
-80
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX753
-120
-100
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-100
-80
-5
-0.1
-10
I
EBO
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
-1.25
-1
-120
-100
-5
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-80V
V
CB
=-100V
V
CB
=-80V,
T
amb
=100°C
V
CB
=-100V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
-0.1
-10
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
Emitter Cut-Off
Current
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
V
V
-1.25 V
-1
V
3-260
ZTX752
ZTX753
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
ZTX752
MIN. TYP.
100
140
40
600
30
ZTX753
MAX. MIN. TYP.
100
140
40
600
30
MAX.
UNIT CONDITIONS.
Transition
Frequency
Switching Times
f
T
t
on
t
off
MHz
ns
ns
pF
I
C
=-100mA, V
CE
=-5V
f=100MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
V
CB
=10V f=1MHz
Output
Capacitance
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissi ation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t
1
D=t
1
/t
P
t
P
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5
0
per
at u
re
D=0.2
D=0.1
Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-261
ZTX752
ZTX753
TYPICAL CHARACTERISTICS
0.6
0.5
td
tr
tf
ns
140
120
100
80
60
40
20
I
B1
=I
B2
=I
C
/10
ts
ns
1400
1200
1000
800
600
400
200
0
0.1
1
td
ts
tf
tr
V
CE(sat)
- (Volts)
0.4
0.3
0.2
0.1
0
I
C
/I
B
=10
Switching time
0.1
1
10
0.0001
0.001
0.01
0
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
Switching Speeds
1.4
225
V
BE(sat)
- (Volts)
1.2
h
FE
- Gain
175
V
CE
=2V
125
1.0
I
C
/I
B
=10
0.8
75
0.6
0
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
h
FE
v I
C
10
1.2
V
BE(sat)
v I
C
Single Pulse Test at T
amb
=25°C
1.0
I
C
- Collector Current (Amps)
V
BE
- (Volts)
1
V
CE
=2V
0.8
0.6
0.1
D.C.
1s
100ms
10ms
1.0ms
100µs
0.4
0.0001
0.001
0.01
0.1
1
10
ZTX752
ZTX753
0.01
0.1
1
10
100
I
C
-
Collector Current (Amps)
V
CE
-
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-262
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