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3.0SMCJ12C

Description
3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size181KB,4 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet View All

3.0SMCJ12C Overview

3000 W, BIDIRECTIONAL, SILICON, TVS DIODE

3.0SMCJ Series
Surface Mount Transient Voltage Suppessor
Stand-off Voltage :
11 to 220V
Peak Pulse Power :
3000 W
Features
3000W peak pulse power capability with
a 10/1000µs waveform
Excellent clamping capability
Low inductance
High temperature soldering : 250 °C/10
seconds at terminals.
Built-in stran relief
SMC/DO-214AB
Mechanical Data
Case : SMC Molded plastic
Lead : Lead Formed for Surface Mount
Mounting position : Any
Weight : 0.21 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation on 10/1000 µs waveform
(1) (2)
Peak Pulse Current on 10/1000 s waveform
(1)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load
(2)(3)
Operating Junction and Storage Temperature Range
Symbol
P
PPM
I
PPM
I
FSM
T
J
, T
STG
Value
3000
See Next Table
200
- 55 to + 150
Unit
W
A
A
°
C
Notes :
(1) Non-repetitive Current pulse, per Fig. 3 and derated above Ta = 25 °C per Fig. 1
(2) Mounted on 5.0 mm2 (0.013 thick) land areas.
(3) Measured on 8.3 ms , single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
http://www.luguang.cn
mail:lge@luguang.cn
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