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30KP170S

Description
Glass passivated junction chip
File Size121KB,3 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet View All

30KP170S Overview

Glass passivated junction chip

30KP33S,SC SERIES
30K Watts TVS Diodes
V
R
: 33 - 400 Volts
P
PK
: 30,000 Watts
Features
Glass passivated junction chip
Excellent Clamping Capability
Fast Response Time
Low Leakage Current
Pb / RoHS Free
DO-204AR
0.251 (6.40)
0.244 (6.20)
1.00 (25.4)
MIN.
Mechanical Data
Case : molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 1.40 grams (approximate)
0.051 (1.30)
0.047 (1.20)
0.368 (9.35)
0.364 (9.25)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
(Ta = 25
°C)
Rating
Peak Pulse Power Dissipation (10 x 1000μs, see Fig.1 )
Steady State Power Dissipation
Peak Forward Surge Current, 8.3ms Single Half Sine Wave
I
FSM
(Uni-directional devices only)
Operating and Storage Temperature Range
T
J
, T
STG
- 65 to + 150
°C
250
A
Symbol
P
PK
P
D
Value
30,000
7
Unit
W
W
Fig. 1 - Pulse Wave Form
PEAK PULSE CURRENT - % I
PP
tr
100
Peak Value - I
PP
Test Waveform
Paramiters
tr = 10
μs
tp = 1000
μs
Half Value - I
PP
2
50
10x1000
μs
Waveform
tp
0
0
1
2
3
T, TIME(ms)
http://www.luguang.cn
mail:lge@luguang.cn
11
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