DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG2012TB
L-BAND SPDT SWITCH
DESCRIPTION
The
µ
PG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for
mobile phone and another L-band application.
This device can operate frequency from 0.5 GHz to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin super minimold package. And this package is able to high-density surface
mounting.
FEATURES
• Supply voltage
• Switch control voltage
• Low insertion loss
: V
DD
= 2.7 to 3.0 V (2.8 V TYP.)
: V
cont (H)
= 2.7 to 3.0 V (2.8 V TYP.)
: V
cont (L)
=
−0.2
to +0.2 V (0 V TYP.)
: L
INS1
= 0.27 dB TYP. @ f = 0.5 to 1.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: L
INS2
= 0.30 dB TYP. @ f = 2.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: L
INS3
= 0.30 dB TYP. @ f = 2.5 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V (Reference
value)
• High isolation
: ISL1 = 28 dB TYP. @ f = 0.5 to 2.0 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V
: ISL2 = 25 dB TYP. @ f = 2.5 GHz, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V (Reference
value)
• High-density surface mounting : 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATIONS
•
L-band digital cellular or cordless telephone
•
PCS, W-LAN, WLL and Bluetooth
TM
etc.
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
G3A
Supplying Form
•
Embossed tape 8 mm wide
•
Pin 1, 2, 3 face the perforation side of the tape
•
Qty 3 kpcs/reel
µ
PG2012TB-E3
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PG2012TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10218EJ01V0DS (1st edition)
Date Published December 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
µ
PG2012TB
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
4
3
(Top View)
4 4
(Bottom View)
3
Pin No.
1
Pin Name
OUTPUT1
GND
OUTPUT2
V
cont
INPUT
V
DD
G3A
3
2
2
3
4
5
2
5 5
2
1
6
1
6 6
1
5
6
TRUTH TABLE
V
cont
Low
High
INPUT−OUTPUT1
OFF
ON
INPUT−OUTPUT2
ON
OFF
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C, unless otherwise specified)
°
Parameter
Supply Voltage
Switch Control Voltage
Input Power
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
V
DD
V
cont
P
in
P
D
T
A
T
stg
Ratings
+6.0
+6.0
+26
150
Note
−45
to +85
−55
to +150
Unit
V
V
dBm
mW
°C
°C
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB, T
A
= +85°C
RECOMMENDED OPERATING RANGE (T
A
= +25°C, unless otherwise specified)
°
Parameter
Supply Voltage
Switch Control Voltage (H)
Switch Control Voltage (L)
Symbol
V
DD
V
cont(H)
V
cont(L)
MIN.
2.7
2.7
−0.2
TYP.
2.8
2.8
0
MAX.
3.0
3.0
0.2
Unit
V
V
V
2
Data Sheet PG10218EJ01V0DS
µ
PG2012TB
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
°
Parameter
Insertion Loss1
Insertion Loss2
Isolation1
Input Return Loss
Output Return Loss
0.1 dB Gain Compression
Input Power
Note
Supply Current
Switching Control Current
Symbol
L
INS1
L
INS2
ISL1
RL
in
RL
out
P
in(0.1 dB)
Test Conditions
f = 0.5 to 1.0 GHz
f = 2.0 GHz
f = 0.5 to 2.0 GHz
f = 0.5 to 2.5 GHz
f = 0.5 to 2.5 GHz
f = 2.0 GHz
MIN.
−
−
24
15
15
+17.5
−
−
TYP.
0.27
0.30
28
20
20
+20.5
MAX.
0.50
0.50
−
−
−
−
Unit
dB
dB
dB
dB
dB
dBm
I
DD
I
cont
50
4
100
20
µ
A
µ
A
Note
P
in(0.1dB)
is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
STANDARD CHARACTERISTICS FOR REFERENCE
(T
A
= +25°C, V
DD
= 2.8 V, V
cont
= 2.8 V/0 V, DC cut capacitors = 56 pF, unless otherwise specified)
°
Parameter
Insertion Loss3
Isolation2
1 dB Gain Compression
Input Power
Note
Switching Control Speed
Symbol
L
INS3
ISL2
P
in(1 dB)
Test Conditions
f = 2.5 GHz
f = 2.5 GHz
f = 2.0 GHz
MIN.
−
−
−
−
TYP.
0.30
25
+24.0
MAX.
−
−
−
−
Unit
dB
dB
dBm
t
SW
300
ns
Note
P
in(1dB)
is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors
should be chosen to accommodate the frequency of operation, bandwidth, switching speed and
the condition with actual board of your system. The range of recommended DC cut capacitor
value is less than 100 pF.
Data Sheet PG10218EJ01V0DS
3
µ
PG2012TB
EVALUATION CIRCUIT (V
DD
= 2.8 V, V
cont
= 2.8 V/0 V, DC cut capacitors = 56 pF)
OUTPUT1
OUTPUT2
56 pF
56 pF
1
2
3
6
5
4
56 pF
1 000 pF
1 000 pF
V
DD
INPUT
V
cont
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10218EJ01V0DS
µ
PG2012TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
V
DD
6pin SMM SPDT SW
Vc1
OUTPUT1
OUT 1
C2
C
2
C
4
C1
G3A
INPUT
C1
IN
C3
C1
C
C
5
1
C2
OUT 2
OUTPUT2
Vc2
V
cont
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
Values
56 pF
1 000 pF
Data Sheet PG10218EJ01V0DS
5
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