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2SJ286(CM)TB

Description
Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
CategoryDiscrete semiconductor    The transistor   
File Size99KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SJ286(CM)TB Overview

Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

2SJ286(CM)TB Parametric

Parameter NameAttribute value
Objectid1454195087
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.15 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
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