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IRGPS40B120UPBF

Description
80 A, 1200 V, N-CHANNEL IGBT, TO-274AA
CategoryDiscrete semiconductor    The transistor   
File Size108KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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IRGPS40B120UPBF Overview

80 A, 1200 V, N-CHANNEL IGBT, TO-274AA

IRGPS40B120UPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-274AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)80 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
Maximum landing time (tf)33 ns
Gate emitter threshold voltage maximum6 V
JEDEC-95 codeTO-274AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)595 W
Certification statusNot Qualified
Maximum rise time (tr)55 ns
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)357 ns
Nominal on time (ton)115 ns
PD- 95899A
IRGPS40B120UP
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast IGBT
Features
• Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
C
V
CES
= 1200V
V
CE(on)
typ. = 3.12V
G
E
@ V
GE
= 15V,
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
I
CE
= 40A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current

Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
80
40
160
160
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Le
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
–––
40
–––
–––
–––
Units
°C/W
N(kgf)
g (oz)
nH
www.irf.com
1
03/15/05
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