2N5401 / MMBT5401
2N5401
MMBT5401
C
E
C
B
TO-92
E
SOT-23
Mark: 2L
B
PNP General Purpose Amplifier
This device is designed as a general purpose amplifier and switch
for applications requiring high voltages.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
150
160
5.0
600
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5401
625
5.0
83.3
200
Max
*MMBT5401
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
2001 Fairchild Semiconductor Corporation
2N5401/MMBT5401, Rev A
2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 120 V, I
E
= 0
V
CB
= 120 V, I
E
= 0, T
A
= 100°C
V
EB
= 3.0 V, I
C
= 0
150
160
5.0
50
50
50
V
V
V
nA
µA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
I
C
= 50 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
50
60
50
240
0.2
0.5
1.0
1.0
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
I
C
= 10 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 1.0 MHz
I
C
= 250
µA,
V
CE
= 5.0 V,
R
S
= 1.0 kΩ,
f = 10 Hz to 15.7 kHz
100
300
6.0
8.0
MHz
pF
dB
3
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0
Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0
Vtf=0 Xtf=0 Rb=10)
2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
200
V
CE
= 5V
150
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
100
25 °C
0.2
25 °C
125 °C
50
- 40 °C
0.1
- 40 °C
0
0.0001
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (A)
1
0
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE -EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40 °C
25 °C
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.8
- 40 °C
25 °C
0.6
125 °C
0.6
125 °C
0.4
β
= 10
0.4
V
C E
= 5V
0.2
0.1
I
C
1
10
- COLLECTOR CURRENT ( mA)
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
V
CB
= 10 0V
BV
CER
- BREAKDOWN VOLTAGE (V)
100
Collector-Emitter Breakdown
Voltage with Resistance
Between Emitter-Base
220
210
10
1
200
190
0.1
180
25
50
75
100
125
T
A
- AM BIENT TE MPE RATURE (
°
C)
150
170
0.1
1
10
100
1000
RESISTANCE (k
Ω
)
2N5401 / MMBT5401
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Voltage
80
Power Dissipation vs
Ambient Temperature
700
P
D
- POWER DISSIPATION (mW)
600
500
400
300
200
100
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
TO-92
f = 1.0 MHz
CAPACITANCE (pF)
60
40
C
eb
20
C
cb
0
0.1
1
10
100
V
R
- REVERSE BIAS VOLTAGE(V)
3
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration:
Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
LOT:
CBVK741B019
HTB:B
QTY:
10000
See Fig 2.0 for various
Reeling Styles
NSID:
PN2222N
SPEC:
D/C1:
D9842
SPEC REV:
QA REV:
B2
FSCINT
Label
(FSCINT)
5 Reels per
Intermediate Box
F63TNR
Label
Customized
Label
375mm x 267mm x 375mm
Intermediate Box
F63TNR Label sample
LOT: CBVK741B019
FSID: PN222N
D/C1: D9842
D/C2:
QTY1:
QTY2:
QTY: 2000
SPEC:
SPEC REV:
CPN:
N/F: F
Customized
Label
(F63TNR)3
TO-92 TNR/AMMO PACKING INFROMATION
Packing
Reel
Style
A
E
Ammo
M
P
Quantity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Pack Options
Unit weight
= 0.22 gm
Reel weight with components
= 1.04 kg
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units
FSCINT
Label
327mm x 158mm x 135mm
Immediate Box
Customized
Label
5 Ammo boxes per
Intermediate Box
F63TNR
Label
333mm x 231mm x 183mm
Intermediate Box
Customized
Label
(TO-92) BULK PACKING INFORMATION
EOL
CODE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5 OPTION STD
TO-92 STANDARD
STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
TO-92 STANDARD
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES
BCXXX, BFXXX, BSRXXX),
97, 98
LEADCLIP
DIMENSION
NO LEAD CLIP
NO LEAD CLIP
NO LEADCLIP
QUANTITY
2.0 K / BOX
1.5 K / BOX
2.0 K / BOX
BULK OPTION
See Bulk Packing
Information table
Anti-static
Bubble Sheets
FSCINT Label
L34Z
NO LEADCLIP
2.0 K / BOX
2000 units per
EO70 box for
std option
114mm x 102mm x 51mm
Immediate Box
5 EO70 boxes per
intermediate Box
530mm x 130mm x 83mm
Intermediate box
Customized
Label
FSCINT Label
10,000 units maximum
per intermediate box
for std option
©2001 Fairchild Semiconductor Corporation
March 2001, Rev. B1
京公网安备 11010802033920号
EEWORLD
