ZDX2F datasheet, PDF - EEWORLD Datasheet

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ZDX2F: DescriptionRectifier Diode, 2 Element, 0.25A, 30V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size111KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZDX2F Overview

Rectifier Diode, 2 Element, 0.25A, 30V V(RRM), Silicon,

ZDX2F Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Zetex Semiconductors
package instruction	R-PSIP-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JESD-30 code	R-PSIP-W3
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	1.5 A
Number of components	2
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	235
Maximum power dissipation	0.375 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	1 µA
Maximum reverse recovery time	0.003 µs
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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SILICON PLANAR HIGH SPEED SWITCHING

COMMON

CATHODE DIODE PAIR

I

ISSUE 2- MARCH 94

ZDXIF

ZDX2F

I

NODE PIN CONNECTION

1

r-”+

2

1

3

E-Line

T092 Compatible

ABSOLUTE MAXIMUM

PARAMETER

Non-Repetitive

RATINGS.

SYMBOL

‘QSM

‘RRM

lFAV)

ZDXIF

ZDX2F

___

UNIT

v

Peak Reverse Voltage

——-

Repetitive Peak Reverse Voltage

20 ‘—

— 50

______

———

—-.

v

—-——_

Average Rectified Forward Current

—.—

Non-Repetitive

Peak Forward Current

,-

Operating and Storage Temperature

e

‘~g

a,,,

“—

‘~~

~;

$

ELECTRICAL CHARACTERISTICS

(at

T..... = 25°C

unless otherwise stated).

.—.

PARAMETER

Reverse Breakdown

Voltage

Reverse Current

ZDXIF

ZDX2F

SYMBOL

‘(BR)R

\R

MIN.

217

50

1.0

100

3

10

2.5

MAX.

UNIT

CONDITIONS.

-..—.

v

IR=10pA

IR=10KA

-—

WA

At rated VRRM

r At rated VRRM

VA

Tamb=l OO”C

—.

ns +- lF=lOmA, VR=5V*

RL=50Q

-L

ns

lF=l OmA

.—

v–

i lF=l OmA,

Rise time=5ns 120%

———

mV

lF=-l OmA

mV

lF=-l OOmA

mV

lF=-250mA

Reverse Recovery Time

——. ———.——

Forward Recovery Time

—

Forward Overshoot Voltage

Forward Voltage

t rr

tfr

‘fr

—

VF

900

1200

1500

..7 lme..-,

- I

ror

IR 10

-----

,.

recover to lW. ot

IR

peek

3-116

ZDX2F Related Products

	ZDX2F	ZDX1F
Description	Rectifier Diode, 2 Element, 0.25A, 30V V(RRM), Silicon,	Rectifier Diode, 2 Element, 0.25A, 15V V(RRM), Silicon,
Is it Rohs certified?	incompatible	incompatible
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	R-PSIP-W3	R-PSIP-W3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V	1.5 V
JESD-30 code	R-PSIP-W3	R-PSIP-W3
JESD-609 code	e0	e0
Humidity sensitivity level	1	1
Maximum non-repetitive peak forward current	1.5 A	1.5 A
Number of components	2	2
Number of terminals	3	3
Maximum operating temperature	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C
Maximum output current	0.25 A	0.25 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	235	235
Maximum power dissipation	0.375 W	0.375 W
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	30 V	15 V
Maximum reverse current	1 µA	1 µA
Maximum reverse recovery time	0.003 µs	0.003 µs
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED

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