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SGSP322

Description
16A, 50V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size51KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

SGSP322 Overview

16A, 50V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

SGSP322 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFAST SWITCHING
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (Abs) (ID)16 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.13 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Analysis of CMD file of DSP2812
[list=1] [*]MEMORY [*]{ [*]PAGE 0:/* Program Memory */ [*]ZONE0: origin = 0x002000, length = 0x002000/* XINTF zone 0 */ [*]ZONE1: origin = 0x004000, length = 0x002000/* XINTF zone 1 */ [*]RAML0: origi...
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