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NVMFS5826NL

Description
Power MOSFET 60 V, 24 m, 26 A, Single N−Channel
File Size112KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NVMFS5826NL Overview

Power MOSFET 60 V, 24 m, 26 A, Single N−Channel

NVMFS5826NL
Power MOSFET
Features
60 V, 24 mW, 26 A, Single N−Channel
Small Footprint (5x6 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
NVMFS5826NLWF
Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These are Pb−Free Devices and RoHS Compliant
http://onsemi.com
V
(BR)DSS
60 V
R
DS(ON)
MAX
24 mW @ 10 V
32 mW @ 4.5 V
I
D
MAX
26 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 3,
4)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
±20
26
19
39
19
8.0
6.0
3.6
1.8
130
−55
to
+ 175
32
20
A
°C
A
mJ
A
Y
W
ZZ
1
Unit
V
V
A
G (4)
W
S (1,2,3)
A
N−CHANNEL MOSFET
D (5,6)
W
MARKING
DIAGRAM
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L(pk)
= 20 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Mounting Board (top)
Steady
State (Notes 2, 3)
Junction−to−Ambient
Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
3.9
42
Unit
°C/W
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
Rev. 3
1
Publication Order Number:
NVMFS5826NL/D
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