Ordering number:ENN6230
N-Channel Silicon MOSFET
2SK3021
DC/DC Converter Applications
Features
· Low ON-resistance.
· 4V drive.
Package Dimensions
unit:mm
2083B
[2SK3021]
6.5
5.0
4
1.5
2.3
0.5
0.85
0.7
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
unit:mm
2092B
[2SK3021]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.5
0.8
2
3
2.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30100TS (KOTO) TA-2692 No.6230–1/4
2SK3021
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Tc=25˚C
Conditions
Ratings
30
±24
20
45
1.0
30
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=10A
ID=10A, VGS=10V
ID=10A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=20A
VDS=10V, VGS=10V, ID=20A
VDS=10V, VGS=10V, ID=20A
IS=20A, VGS=0
1.0
15
20
15
24
1200
700
280
15
130
150
100
38
5
8
0.85
1.2
20
33
Conditions
Ratings
min
30
10
±10
2.4
typ
max
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
VDD
=15V
ID
=10A
RL
=1.5Ω
D
VOUT
10V
0V
VIN
PW=10µs
D.C.≤1%
G
2SK3021
P.G
50Ω
S
No.6230–2/4
2SK3021
10
9
8
ID - VDS
8.0V 6.0V
4.0V
18
16
14
ID - VGS
VDS=10V
10.0V
3.5
V
Drain Current, I
D
– A
7
6
5
4
3
2
1
0
0
3.0V
Drain Current, I
D
– A
12
10
8
6
4
25
°
C
0.5
1.0
1.5
2.0
VGS=2.5V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
2
0
0
2.5
3.0
3.5
Drain-to-Source Voltage, V
DS
– V
5
Gate-to-Source Voltage, V
GS
– V
50
45
| y
fs
| - I
D
VDS=10V
C
25
°
R DS(on) - VGS
Tc=25°C
ID=10A
Forward Transfer Admittance, | yfs | – S
3
2
10
7
5
3
2
1.0
7
5
3
2
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
C
25
°
=-
Tc
C
75
°
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
18
20
0.1
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Drain Current, I
D
– A
50
Gate-to-Source Voltage, V
GS
– V
3
2
10
7
5
3
2
1.0
7
5
R DS(on) - Tc
I F - VSD
VGS=0
Static Drain-to-Source
On-State Resistance, R
DS (on)
– mΩ
45
35
30
25
20
15
10
5
0
-60
-40
-20
0
20
40
60
80
100
120
140
160
, VG
=10A
ID
4V
S=
Forward Current, I
F
– A
40
25
°
C
0.1
7
5
3
2
0.01
0
0.1
0.2
0.3
0.4
Tc=-
0.5
0.6
25
°
C
0.7
0.8
0V
V S=1
=10A, G
ID
75
°
C
3
2
75
°
C
Tc=-
25
°
C
0.9
1.0
35
40
Ambient Temperature, Ta – ˚C
Diode Forward Voltage, VSD – V
10
10000
7
5
Ciss,Coss,Crss - VDS
f=1MHz
VGS - Qg
VDS=10V
ID =20A
Gate-to-Source Voltage, V
GS
– V
9
8
7
6
5
4
3
2
1
Ciss, Coss, Crss – pF
3
2
1000
7
5
3
2
Ciss
Coss
Crss
5
10
15
20
25
30
100
0
0
0
5
10
15
20
25
30
Drain-to-Source Voltage, V
DS
– V
Total Gate Charge, Qg – nC
No.6230–3/4
2SK3021
SW Time - I D
1000
7
A S O
100
7
5
3
2
Switching Time, SW Time – ns
VDD =15V
VGS=10V
IDP=45A
ID=20A
5
3
2
td(off)
100
7
5
3
2
10
7 0.1
tf
tr
Drain Current, I
D
– A
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10µs 100µs
1m
10
s
ms
DC
op
er
ati
on
Operation in this area
is limited by RDS(on).
td(on)
2
3
5
7 1.0
2
3
5
7 10
2
3
5
0.01
0.01
Tc=25°C
Single pulse
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
Drain Current, I
D
– A
1.2
Drain-to-Source Voltage, V
DS
– V
35
P D - Ta
Allowable Power Dissipation, P
D
– W
P D - Tc
Allowable Power Dissipation, P
D
– W
1.0
30
25
0.8
20
0.6
15
0.4
10
0.2
5
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
Case Temperature, Tc – ˚C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6230–4/4
Analog electronics
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