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K1S321615C-FI600

Description
Pseudo Static RAM, 2MX16, 60ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48
Categorystorage    storage   
File Size167KB,10 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K1S321615C-FI600 Overview

Pseudo Static RAM, 2MX16, 60ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48

K1S321615C-FI600 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionVFBGA,
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time60 ns
JESD-30 codeR-PBGA-B48
length8 mm
memory density33554432 bit
Memory IC TypePSEUDO STATIC RAM
memory width16
Number of functions1
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
Certification statusNot Qualified
Maximum seat height1 mm
Maximum supply voltage (Vsup)3.1 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)2.9 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width6 mm
Advance
K1S321615C
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
Draft Date
April 18, 2003
Remark
Advanced
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 0.0
April 2003
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