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2SA1052C

Description
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size46KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SA1052C Overview

100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3

2SA1052C Parametric

Parameter NameAttribute value
package instructionMPAK-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

2SA1052C Related Products

2SA1052C 2SA1052B 2SA1052D
Description 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, MPAK-3
package instruction MPAK-3 MPAK-3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 100 250
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
Maximum operating temperature 125 °C - 125 °C
Maximum power dissipation(Abs) 0.15 W - 0.15 W
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