2SJ235(L) datasheet, PDF - EEWORLD Datasheet

2SJ235(L): Description3 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size101KB，1 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SJ235(L) Overview

3 A, 60 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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