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RC28F00AM29EWH

Description
Flash, 64MX16, 100ns, PBGA64, 11 X 13 MM, 1 MM PITCH, BGA-64
Categorystorage    storage   
File Size1MB,117 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

RC28F00AM29EWH Overview

Flash, 64MX16, 100ns, PBGA64, 11 X 13 MM, 1 MM PITCH, BGA-64

RC28F00AM29EWH Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction11 X 13 MM, 1 MM PITCH, BGA-64
Contacts64
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time100 ns
Spare memory width8
startup blockBOTTOM/TOP
JESD-30 codeR-PBGA-B64
length13 mm
memory density1073741824 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals64
word count67108864 words
character code64000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
typeNOR TYPE
width11 mm
Numonyx™ Axcell™ M29EW
Datasheet
256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block)
3 V supply flash memory
Features
Supply voltage
— V
CC
= 2.7 to 3.6 V for Program, Erase and
Read
— V
CCQ
= 1.65 to 3.6 V for I/O buffers
Asynchronous Random/Page Read
— Page size: 16 words or 32 bytes
— Page access: 25 ns
— Random access: 100ns (Fortified BGA);
110 ns (TSOP)
Buffer Program
— 512-word program buffer
Programming time
— 0.68 µs per byte (1.48MB/s) typical when
using full buffer size in buffer program
Memory organization
— Uniform blocks, 128 Kbytes/64 Kwords
each
Program/Erase controller
— Embedded byte/word program algorithms
Program/ Erase Suspend and Resume
— Read from any block during Program
Suspend
— Read and Program another block during
Erase Suspend
Unlock Bypass/Block Erase/Chip Erase/Write
to Buffer
— Faster Buffered/Batch Programming
— Faster Block and Chip Erase
Vpp/WP# pin protection
— Protects first or last block regardless of
block protection settings
Software protection
— Volatile Protection
— Non-Volatile Protection
— Password Protection
— Password Access
Extended Memory block
— 128-word/256-byte block for permanent,
secure identification.
— can be programmed and locked by factory
or by the customer
Low power consumption
— Standby and automatic standby
Minimum 100,000 Program/Erase cycles per
block
ETOX
TM
* X (65nm) MLC technology
Fortified BGA and TSOP packages
Green packages available
— RoHS Compliant
— Halogen Free
November 2009
208045-07
1
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