VISHAY
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
MOSMIC
®
for TV-Tuner Prestage with 5 V Supply
Voltage
SOT 143
Comments
MOSMIC
-
MOS Monolithic Integrated Circuit
2
1
Features
• Easy Gate 1 switch-off with PNP switching transis-
tors inside PLL
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 28 mS
• Partly internal self biasing-network on chip
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
• Supply voltage 5 V (3 V to 7 V)
• SMD package, standard and reverse pinning
3
1
4
SOT 143R
2
4
1
2
3
SOT 343R
4
3
16904
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Low noise gain controlled VHF and UHF input stages,
such as in digital and analog TV tuners.
RFC
V
DD
(V
DS
)
G2
G1
S
RG1
13650
Mechanical Data
Typ:
S506TY
Case:
Plastic case (SOT 143)
Weight:
8 mg
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
S506TYR
Case:
Plastic case (SOT 143R)
Weight:
8 mg
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
Typ:
S506TYRW
Case:
Plastic case (SOT 343R)
Weight:
6 mg
Pinning:
1 = Source, 2 = Drain,
3 = Gate 2, 4 = Gate 1
C block
AGC
C block
RF in
D
RF out
C block
V
GG
(V
RG1
)
Document Number 85095
Rev. 1, 21-Oct-02
www.vishay.com
1
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
Parts Table
Part
S506TY
S506TYR
S506TYRW
Y06
Y6R
WY6
Marking
SOT143
SOT143R
SOT343R
Package
VISHAY
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak
current
Gate 1 - source voltage
Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
V
DS
I
D
±
I
G1/G2SM
+ V
G1SM
- V
G1SM
±
V
G2SM
P
tot
T
Ch
T
stg
Value
8
30
10
6
1.5
6
200
150
- 55 to + 150
Unit
V
mA
mA
V
V
V
mW
°C
°C
Maximum Thermal Resistance
Parameter
Channel ambient
1)
Test condition
Symbol
R
thChA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35 µm Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Drain - source breakdown voltage
Test condition
I
D
= 10 µA, V
G1S
= V
G2S
= 0
Symbol
V
(BR)DSS
+ V
(BR)G1SS
±
V
(BR)G2SS
+ I
G1SS
±
I
G2SS
I
DSO
V
G1S(OFF)
V
G2S(OFF)
8
0.3
0.3
1.0
12
Min
12
7
7
10
10
20
20
17
1.0
1.2
Typ.
Max
Unit
V
V
V
nA
nA
mA
V
V
Gate 1 - source breakdown voltage + I
G1S
= 10 mA, V
G2S
= V
DS
= 0
Gate 2 - source breakdown voltage
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
Gate 1 - source leakage current
Gate 2 - source leakage current
Drain - source operating current
Gate 1 - source cut-off voltage
Gate 2 - source cut-off voltage
+ V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 kΩ
V
DS
= 5 V, V
G2S
= 4, I
D
= 20 µA
V
DS
= V
RG1
= 5 V, R
G1
= 56 kΩ, I
D
= 20 µA
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
V
DS
= V
RG1
= 5 V, V
G2S
= 4 V, R
G1
= 56 kΩ, I
D
= I
DSO,
f = 1 MHz
Parameter
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Test condition
Symbol
|y
21s
|
C
issg1
C
rss
C
oss
Min
23
Typ.
28
2.5
20
0.9
Max
33
3.0
Unit
mS
pF
fF
pF
Document Number 85095
Rev. 1, 21-Oct-02
www.vishay.com
2
VISHAY
S506TY/S506TYR/S506TYRW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85095
Rev. 1, 21-Oct-02
www.vishay.com
5
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