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2SC3184K

Description
Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size209KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SC3184K Overview

Power Bipolar Transistor, 0.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN

2SC3184K Parametric

Parameter NameAttribute value
Objectid1417094763
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment30 W
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz

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