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W-DWN347-12

Description
Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, WAFER
CategoryDiscrete semiconductor    diode   
File Size200KB,2 Pages
ManufacturerIXYS
Environmental Compliance  
Download Datasheet Parametric View All

W-DWN347-12 Overview

Rectifier Diode, 1 Phase, 1 Element, 400A, 1200V V(RRM), Silicon, WAFER

W-DWN347-12 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIXYS
Parts packaging codeWAFER
package instructionWAFER
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeX-XUUC-N
JESD-609 codee3
Maximum non-repetitive peak forward current10500 A
Number of components1
Phase1
Maximum output current400 A
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperature35
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