2N4123
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2N4123
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 100 mA.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30
40
5.0
200
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N4123
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
2001 Fairchild Semiconductor Corporation
2N4123, Rev A
2N4123
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
30
40
5.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
V
CE
(sat)
V
BE
(sat)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
CE
= 1.0 V, I
C
= 2.0 mA
V
CE
= 1.0 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
50
25
150
0.3
0.95
V
V
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
V
CB
= 5.0 V, f = 100 kHz
V
EB
= 0.5 V, f = 0.1 MHz
I
C
= 2.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
I
C
= 10 mA, V
CE
= 20 V
f = 100 MHz
V
CE
= 5.0 V, I
C
= 100
µA,
R
S
= 1.0 kΩ,
B
W
= 10 Hz to 15.7 kHz
50
2.5
250
6.0
4.0
8.0
200
pF
pF
f
T
NF
Current Gain - Bandwidth Product
Noise Figure
MHz
dB
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
2N4123
NPN General Purpose Amplifier
(continued)
Typical Characteristics
500
400
125 °C
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
β
= 10
125 °C
300
25 °C
0.1
25 °C
200
100
0
0.1
- 40 °C
0.05
- 40 °C
1
10
I
C
- COLLECTOR CURRENT (mA)
100
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
-
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
0.6
125 °C
0.6
125 °C
0.4
0.4
0.1
I
C
1
10
- COLLECTOR CURRENT (mA)
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
CAPACITANCE (pF)
10
Capacitance vs
Reverse Bias Voltage
f = 1.0 MHz
100
10
1
0.1
V
CB
= 30V
5
4
3
2
C obo
C ibo
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
1
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
2N4123
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
12
NF - NOISE FIGURE (dB)
10
8
6
4
2
0
0.1
I C = 100
µA,
R S = 500
Ω
Noise Figure vs Source Resistance
12
NF - NOISE FIGURE (dB)
I C = 1.0 mA
I C = 1.0 mA
R S = 200Ω
I C = 50
µA
R S = 1.0 kΩ
I C = 0.5 mA
R S = 200Ω
V
CE
= 5.0V
10
I C = 5.0 mA
8
6
4
2
0
0.1
I C = 50
µA
I C = 100
µA
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE ( kΩ )
100
Current Gain and Phase Angle
vs Frequency
50
45
40
35
30
25
20
15
10
5
0
h
fe
P
D
- POWER DISSIPATION (W)
Power Dissipation vs
Ambient Temperature
0
20
40
60
80
100
120
140
160
180
1000
1
- CURRENT GAIN (dB)
SOT-223
0.75
θ
- DEGREES
TO-92
θ
0.5
SOT-23
0.25
h
V
CE
= 40V
I
C
= 10 mA
1
10
100
f - FREQUENCY (MHz)
fe
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
Turn-On Time vs Collector Current
500
I
B1
= I
B2
=
40V
TIME (nS)
100
15V
t
r @
V
CC
= 3.0V
2.0V
10
t
d @
V
CB
= 0V
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
I
c
10
Rise Time vs Collector Current
500
V
CC
= 40V
t
r
- RISE TIME (ns)
I
B1
= I
B2
=
I
c
10
100
T
J
= 125°C
T
J
= 25°C
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
2N4123
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
500
t
S
- STORAGE TIME (ns)
T
J
= 25°C
Fall Time vs Collector Current
500
I
B1
= I
B2
=
t
f
- FALL TIME (ns)
T
J
= 125°C
I
c
10
I
B1
= I
B2
=
I
c
10
V
CC
= 40V
100
T
J
= 125°C
100
T
J
= 25°C
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Current Gain
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
h
oe
- OUTPUT ADMITTANCE (
µ
mhos)
500
100
Output Admittance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
h
fe
- CURRENT GAIN
100
10
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
h
re
- VOLTAGE FEEDBACK RATIO (x10
100
h
ie
- INPUT IMPEDANCE (k
Ω
)
_4
)
Input Impedance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
Voltage Feedback Ratio
10
7
5
4
3
2
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
10
1
0.1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
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