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2SC1170A

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size127KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SC1170A Overview

Transistor

2SC1170A Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1170A
DESCRIPTION
·With
TO-3 package
·High
voltage ,high speed
APPLICATIONS
·Designed
for use in large screen color
deflection circuits
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1400
500
6
3.5
1.0
50
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
2.5
UNIT
℃/W
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