EEWORLDEEWORLDEEWORLD

Part Number

Search

SIHF9540-E3

Description
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size4MB,7 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet Parametric Compare View All

SIHF9540-E3 Overview

19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

SIHF9540-E3 Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage100 V
stateDISCONTINUED
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeP-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current19 A
Rated avalanche energy960 mJ
Maximum drain on-resistance0.2000 ohm
Maximum leakage current pulse76 A
IRF9540, SiHF9540
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= - 10 V
61
14
29
Single
S
FEATURES
- 100
0.20
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF9540PbF
SiHF9540-E3
IRF9540
SiHF9540
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
- 100
± 20
- 19
- 13
- 72
1.0
640
- 19
15
150
- 5.5
- 55 to + 175
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 2.7 mH, R
G
= 25
Ω,
I
AS
= - 19 A (see fig. 12).
c. I
SD
- 19 A, dI/dt
200 A/µs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
www.kersemi.com
1

SIHF9540-E3 Related Products

SIHF9540-E3 IRF9540 IRF9540PBF SIHF9540
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Number of terminals 3 3 3 3
Minimum breakdown voltage 100 V 100 V 100 V 100 V
state DISCONTINUED DISCONTINUED ACTIVE DISCONTINUED
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN DRAIN DRAIN
Number of components 1 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 19 A 19 A 19 A 19 A
Rated avalanche energy 960 mJ 960 mJ 640 mJ 960 mJ
Maximum drain on-resistance 0.2000 ohm 0.2000 ohm 0.2000 ohm 0.2000 ohm
Maximum leakage current pulse 76 A 76 A 72 A 76 A
Links to this website
Spring is here, and my mood has improved. Where can I buy some new clothes that are healthy and environmentally friendly? Go to Taobao Mall. Dingguagua Clothing Flagship Store has prepared a wardrobe ...
tiandi8734 Embedded System
Ask a simple application question
Hey, I just started to use MFC (VS2005). I want to make a small program and use the soft keyboard. I hope that when the mouse clicks into the edit box, the soft keyboard will be automatically called a...
liyong19850209 Embedded System
I don't have a development board and use my own computer. Do I also need a BSP?
Hello everyone, I installed PB5.0, without using a development board, just using a PC. When seeing the new platform, it prompts that there is no BSP. How can I solve it?...
zhangjmxx Embedded System
Wireless network technology and its application based on ZigBee
Abstract: ZigBee is an emerging short-distance, low-rate wireless network technology. This paper analyzes ZigBee technology, IEEE802.15.4 standard and related applications in detail, discusses their r...
JasonYoo RF/Wirelessly
The most basic things about IGBT
IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (ins...
Jacktang Analogue and Mixed Signal
Embedded Linux and Embedded Linux Development Environment
Embedded Linux and Embedded Linux Development Environment...
jek9528 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1946  1168  143  503  1142  40  24  3  11  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号