HRW0202A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-209E (Z)
Rev 5
Jul. 1998
Features
•
Low forward voltage drop and suitable for high effifiency rectifying.
•
MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HRW0202A
Laser Mark
S17
Package Code
MPAK
Outline
3
2
1
(Top View)
1 Anode
2 Anode
3 Cathode
HRW0202A
Absolute Maximum Ratings (Ta = 25°C)
*1
Item
Repetitive peak reverse
voltage
Average rectified current
Non-Repetitive peak
forward surge current
Junction temperature
Storage temperature
Symbol
V
RRM*2
I
O*2
I
FSM *3
Tj
Tstg
Value
20
200
3
125
–55 to +125
Unit
V
mA
A
°C
°C
Notes 1. Two device total
Notes 2. See from Fig.4 to Fig.7
Notes 3. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
*1
Item
Forward voltage
Reverse current
Thermal resistance
Symbol
V
F
I
R
R
th(j-a)
Min
—
—
—
Typ
—
—
350
Max
0.40
50
—
Unit
V
µA
Test Condition
I
F
= 100 mA
V
R
= 20V
°C/W
Polyimide board
*2
Notes 1. Per one device
Notes 2. Polyimide board
20hx15wx0.8t
1.5
3.0
1.5
1.5
0.8
Unit: mm
2
HRW0202A
Main Characteristic
1.0
Pulse test
10
–1
10
–3
Pulse test
–4
Forward current I
F
(A)
10
–2
Ta = 75°C
Reverse current I
R
(A)
10
Ta = 75°C
10
–5
10
–3
Ta = 25°C
10
–6
10
–4
Ta = 25°C
10
–5
10
–7
10
–6
0
0.1
0.2
0.3
0.4
0.5
0.6
10
–8
0
Forward voltage V
F
(V)
Fig.1 Forward current Vs. Forward voltage
15
20
5
10
Reverse voltage V
R
(V)
25
Fig.2 Reverse current Vs. Reverse voltage
10
2
f = 1MHz
Pulse test
Capacitance C (pF)
10
1.0
1.0
10
Reverse voltage V
R
(V)
40
Fig.3 Capacitance Vs. Reverse voltage
3
HRW0202A
Main Characteristic
0.08
Forward power dissipation Pd (W)
0A
t
0.25
D=1/6
Reverse power dissipation Pd (W)
0V
t
D=
\
T
0.06
T
t
Tj =25°C D= T
\
0.20
T
t
Sin(
˘=
180°)
D=1/3
D=1/2
DC
D=5/6
D=2/3
D=1/2
Sin(
˘=
180°)
Tj =125°C
0.15
0.04
0.10
0.02
0.05
0
0
0
0.02
0.04
0.06 0.08
@ @
IF
@
(
A)
0.1
0
5
10
15
20
25
Forward current
Reverse voltage
@ @
VR
@
(
V)
Fig4. F
orward power dissipation
Vs. Forward current
Fig5.
Reverse power dissipation
Vs. Reverse voltage
0.12
@Io
(A)
0.25
@Io
(A)
0.10
Sin(
˘=
180°)
0.08
0.06
D=1/6
0.04
VR=VRRM/2
DC
D=1/2
D=1/3
0.20
Sin(
˘=
180°)
D=1/2
0.15 D=1/3
D=1/6
0.10
0.05
TjR RRM
=125°C
0
-25
V =V
/2
DC
Average rectified current
0.02
Tj =125°C
0
-25
Rth(j-a)=350°C/W
Per one device
Average rectified current
Rth(j-a)=350°C/W
Two device total
0
25
50
75 100 125
0
25
50
75 100 125
Ambient temperature Ta ( °C)
Fig.6 Average rectified current Vs. Ambient temperature
Ambient temperature Ta ( °C)
Fig.7 Average rectified current Vs. Ambient temperature
4
HRW0202A
Package Dimensions
Unit : mm
0.65
– 0.3
+ 0.1
Laser Mark
0.4
– 0.05
+ 0.10
0.16
– 0.06
+ 0.10
3
+ 0.2
– 0.6
0.1
0.65
+ 0.3
–
2
0.95
1
0.95
2.8
S17
1.9
0.3
2.8
+ 0.1
–
1.5
0 – 0.10
1 Anode
2 Anode
3 Cathode
Hitachi Code
JEDEC Code
EIAJ Code
Weight (g)
MPAK(1)
—
SC-59A
0.011
0.3
1.1
– 0.1
+ 0.2
5
京公网安备 11010802033920号
EEWORLD
