2SB1204Q datasheet, PDF - EEWORLD Datasheet

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2SB1204Q: DescriptionTRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size378KB，9 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2SB1204Q Overview

TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP, 3 PIN, BIP General Purpose Small Signal

2SB1204Q Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	20 W
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz
Base Number Matches	1

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Ordering number : EN2086C

2SB1204

Bipolar Transistor

–50V, –8A, Low VCE(sat), PNP Single TP/TP-FA

Applications

•

http://onsemi.com

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

Features

•

High current and high fT

•

Excellent linearity of hFE

Low collector-to-emitter saturation voltage

•

Small and slim package making it easy to make 2SB1204-applied sets smaller

Fast switching speed

Speciﬁcations

Absolute Maximum Ratings

at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Tc=25°C

Conditions

Ratings

--60

--50

-6

-8

--12

150

--55 to +150

Unit

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7518-003

6.5

5.0

2.3

1.5

0.5

Package Dimensions

unit : mm (typ)

7003-003

6.5

5.0

2.3

1.5

0.5

2SB1204S-E

2SB1204T-E

2SB1204S-TL-E

2SB1204T-TL-E

7.0

5.5

7.0

0.5

0.8

1.6

7.5

0.6

0.5

0.6

0.8

1.2

2.5

0.85

0.7

0.85

1.2

0 to 0.2

1.2

1 : Base

2 : Collector

3 : Emitter

4 : Collector

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

TP-FA

2.3

Product & Package Information

• Package : TP

• JEITA, JEDEC : SC-64, TO-251

• Minimum Packing Quantity : 500 pcs./bag

• Package : TP-FA

• JEITA, JEDEC : SC-63, TO-252

• Minimum Packing Quantity : 700 pcs./reel

Marking

(TP, TP-FA)

Packing Type (TP-FA) : TL

B1204

Electrical Connection

2,4

RANK

LOT No.

Semiconductor Components Industries, LLC, 2013

September, 2013

60612 TKIM TA-4032/N2503TN (KT)/92098HA (KT)/8309MO/3117AT, TS No.2086-1/9

2SB1204Q Related Products

	2SB1204Q	2SB1204RTL	2SB1204R	2SB1204STL	2SB1204S	2SB1204TL	2SB1204TTL	2SB1204QTL
Description	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 8000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TP-FA, 3 PIN, BIP General Purpose Small Signal
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	compli	unknown	compli	unknown	compli	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A	8 A	8 A	8 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	100	100	140	140	35	200	70
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	2	3	2	3	2	2	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
surface mount	NO	YES	NO	YES	NO	YES	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	130 MHz	130 MHz	130 MHz	130 MHz	130 MHz	130 MHz	130 MHz	130 MHz
Base Number Matches	1	-	1	-	1	-	1	1

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