P6SMB SERIES
Taiwan Semiconductor
CREAT BY ART
Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Typical IR less than 1μA above 10V
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AA (SMB)
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.09 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25℃, tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 50 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJC
R
θJA
T
J
T
STG
VALUE
600
3
100
3.5 / 5.0
10
55
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
A
Volts
℃/W
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25℃ Per Fig. 2
Note 2: V
F
=3.5V on P6SMB6.8 thru P6SMB91 Devices and V
F
=5.0V on P6SMB100 thru P6SMB220 Device.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types P6SMB6.8 thru Types P6SMB220A
2. Electrical Characterstics Apply in Both Directions
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
P6SMBxxxx
(Note 1)
R5
Prefix "H"
R4
M4
Suffix "G"
PACKING CODE
GREEN COMPOUND
CODE
SMB
SMB
SMB
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A)
EXAMPLE
PREFERRED P/N
P6SMB20A R5
P6SMB20A R5G
P6SMB20AHR5
PART NO.
P6SMB20A
P6SMB20A
P6SMB20A
H
AEC-Q101
QUALIFIED
PACKING CODE
R5
R5
R5
G
Green compound
AEC-Q101 qualified
Version: J14
GREEN
COMPOUND
DESCRIPTION
Document Number: DS_D1405062
P6SMB SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
100
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
tr=10μs
Peak Value
IPPM
PEAK PULSE CURRENT (%)
8.3ms Single Half Sine Wave
Half Value-IPPM/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
MEASURED at
STAND-OFF
VOLTAGE,Vwm
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
Document Number: DS_D1405062
Version: J14
P6SMB SERIES
Taiwan Semiconductor
CREAT BY ART
Breakdown Voltage
V
BR
(V)
(Note 1)
Min
P6SMB56
P6SMB56A
P6SMB62
P6SMB62A
P6SMB68
P6SMB68A
P6SMB75
P6SMB75A
P6SMB82
P6SMB82A
P6SMB91
P6SMB91A
P6SMB100
P6SMB100A
P6SMB110
P6SMB110A
P6SMB120
P6SMB120A
P6SMB130
P6SMB130A
P6SMB150
P6SMB150A
P6SMB160
P6SMB160A
P6SMB170
P6SMB170A
P6SMB180
P6SMB180A
P6SMB200
P6SMB200A
P6SMB220
P6SMB220A
Notes:
1. V
BR
measure after I
T
applied for 300us, I
T
=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types P6SMB6.8 through P6SMB220A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
MHJ
MKJ
MLJ
MMJ
MNJ
MPJ
MQJ
MRJ
MSJ
MTJ
MUJ
MVJ
MWJ
MXJ
MYJ
MZJ
NDJ
NEJ
NFJ
NGJ
NHJ
NKJ
NLJ
NMJ
NNJ
NPJ
NQJ
NRJ
NSJ
NTJ
NUJ
NVJ
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90
95
99
105
108
114
117
124
135
143
144
152
153
162
162
171
180
190
198
209
Max
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
V
WM
(V)
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
175.0
185.0
Maximum
@ V
WM
I
D
(uA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Current I
RSM
(A) (Note 2)
7.8
8.1
7.0
7.4
6.4
6.8
5.8
6.1
5.3
5.5
4.8
5.0
4.3
4.5
3.9
4.1
3.6
3.8
3.3
3.5
2.9
3.0
2.7
2.8
2.5
2.6
2.4
2.5
2.1
2.2
1.8
1.9
Maximum
@ I
PPM
Vc(V)
80.5
77.0
89.0
85.0
98.0
92.0
108
103
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
342
328
Maximum
Coefficient
of V
BR
(%/℃)
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
Device
Device
Marking
Code
Reverse Leakage Peak Pulse Clamping Voltage Temperature
Document Number: DS_D1405062
Version: J14
Microcontroller MCU
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