2N6517LEADFREE datasheet, PDF - EEWORLD Datasheet

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2N6517LEADFREE: DescriptionSmall Signal Bipolar Transistor, 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size320KB，2 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N6517LEADFREE Overview

Small Signal Bipolar Transistor, 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

2N6517LEADFREE Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	TO-92, 3 PIN
Contacts	3
Reach Compliance Code	_compli
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN (315)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	40 MHz
Base Number Matches	1

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2N6515 2N6516 2N6517

2N6518 2N6519 2N6520

NPN

PNP

w w w. c e n t r a l s e m i . c o m

COMPLEMENTARY SILICON

HIGH VOLTAGE TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6515, 2N6518

series types are complementary silicon transistors

designed for high voltage driver and amplifier

applications.

MARKING: FULL PART NUMBER

TO-92 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage (NPN)

Emitter-Base Voltage (PNP)

Continuous Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

2N6515

2N6518

MIN MAX

250

6.0

5.0

0.30

0.35

0.50

1.0

0.75

0.85

0.90

2.0

300

220

2N6515

2N6518

250

2N6516

2N6519

300

6.0

5.0

500

250

625

-65 to +150

2N6517

2N6520

350

UNITS

°C

ELECTRICAL

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

VBE(ON)

hFE

CHARACTERISTICS:

(TA=25°C)

TEST CONDITIONS

VCB=150V

VCB=200V

VCB=250V

VEB=5.0V (NPN)

VEB=4.0V (PNP)

IC=100μA

IC=1.0mA

IE=10μA (NPN)

IE=10μA (PNP)

IC=10mA, IB=1.0mA

IC=20mA, IB=2.0mA

IC=30mA, IB=3.0mA

IC=50mA, IB=5.0mA

IC=10mA, IB=1.0mA

IC=20mA, IB=2.0mA

IC=30mA, IB=3.0mA

VCE=10V, IC=100mA

VCE=10V, IC=1.0mA

VCE=10V, IC=10mA

VCE=10V, IC=30mA

VCE=10V, IC=50mA

VCE=10V, IC=100mA

2N6516

2N6519

MIN MAX

300

6.0

5.0

0.30

0.35

0.50

1.0

0.75

0.85

0.90

2.0

270

200

2N6517

2N6520

MIN MAX

350

6.0

5.0

0.30

0.35

0.50

1.0

0.75

0.85

0.90

2.0

200

100

UNITS

R1 (14-August 2012)

2N6517LEADFREE Related Products

	2N6517LEADFREE	2N6519LEADFREE	2N6516LEADFREE	2N6518LEADFREE	2N6520LEADFREE
Description	Small Signal Bipolar Transistor, 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN	Small Signal Bipolar Transistor, 350V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3	3
Reach Compliance Code	_compli	_compli	_compli	_compli	compli
Collector-emitter maximum voltage	350 V	300 V	300 V	250 V	350 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	40	40	45	20
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260	260	260
Polarity/channel type	NPN	PNP	NPN	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	MATTE TIN (315)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	10	10	10	10	10
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	40 MHz	40 MHz	40 MHz	40 MHz	40 MHz
Base Number Matches	1	1	1	1	1

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