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2SC3503-E

Description
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,5 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SC3503-E Overview

Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

2SC3503-E Parametric

Parameter NameAttribute value
Objectid1968361195
Parts packaging codeSIP
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Ordering number:ENN1426C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1381/2SC3503
High-Definition CRT Display,
Video Output Applications
Features
· High breakdown voltage : V
CEO
≥300V.
· Small reverse transfer capacitance and excellent high
frequency characteristic
: C
re
=1.8 pF (NPN), 2.3pF (PNP), V
CB
=30V.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2009B
[2SA1381/2SC3503]
8.0
4.0
2.7
3.0
1.5
7.0
1.6
0.8
0.8
0.6
3.0
11.0
15.5
0.5
( ) : 2SA1381
2.4
4.8
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.2
1
2
3
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1.2
Unit
V
V
V
mA
mA
W
W
Tc=25˚C
7
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE
fT
C
40 to 80
D
60 to 120
E
100 to 200
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
F
160 to 320
40*
150
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
320*
MHz
Unit
µA
µA
* : The 2SA1381/2SC3503 are classified by 10mA h
FE
as follows :
Rank
hFE
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/3107KI/D134MW, TS No.1426-1/5

2SC3503-E Related Products

2SC3503-E 2SA1381-C 2SA1381-D 2SA1381-E 2SA1381-F 2SC3503-D 2SC3503-F 2SC3503-C
Description Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Parts packaging code SIP SIP SIP SIP SIP SIP SIP SIP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknow unknow unknow unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 300 V 300 V 300 V 300 V 300 V 300 V 300 V 300 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 40 60 100 160 60 160 40
JEDEC-95 code TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP PNP PNP PNP NPN NPN NPN
Maximum power dissipation(Abs) 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Objectid 1968361195 - - - 1968361176 1968361194 1968361196 1968361193
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