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2SA1786E-AN

Description
TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C),SIP
CategoryDiscrete semiconductor    The transistor   
File Size54KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2SA1786E-AN Overview

TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C),SIP

2SA1786E-AN Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Code_compli
ECCN codeEAR99
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)100
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)1 W
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches1
Ordering number:ENN3512B
2SA1786 : PNP Epitaxial Planar Silicon Transistor
2SC4646 : NPN Triple Diffused Planar Silicon Transistor
2SA1786/2SC4646
High Voltage Driver Applications
Features
· Large current capacity (I
C
=2A).
· High breakdown voltage (V
CEO
≥400V).
Package Dimensions
unit:mm
2064A
[2SA1786/2SC4646]
2.5
1.45
6.9
1.0
4.5
1.0
0.6
1.0
0.9
1
2
3
0.5
0.45
( ) : 2SA1786
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Colletor Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
2.54
2.54
Ratings
(–)400
(–)400
(–)5
(–)2
(–)4
1
150
–55 to +150
4.0
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
VCB=(–)300V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
VCB=(–)30V, f=1MHz
IC=(–)500mA, IB=(–)50mA
IC=(–)500mA, IB=(–)50mA
40*
(40)60
(25)15
(–)1.0
(–)1.0
Conditions
Ratings
min
typ
max
(–)1.0
(–)1.0
200*
MHz
pF
V
V
Unit
µA
µA
* : The 2SA1786/2SC4646 are classified by 100mA h
FE
as follows :
Rank
hFE
C
40 to 80
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/12894TH AX-8287/4231MH/5180TA (KOTO) X-6912 No.3512–1/5
1.0

2SA1786E-AN Related Products

2SA1786E-AN
Description TRANSISTOR,BJT,PNP,400V V(BR)CEO,2A I(C),SIP
Is it Rohs certified? conform to
Reach Compliance Code _compli
ECCN code EAR99
Maximum collector current (IC) 2 A
Configuration Single
Minimum DC current gain (hFE) 100
Maximum operating temperature 150 °C
Polarity/channel type PNP
Maximum power dissipation(Abs) 1 W
surface mount NO
Terminal surface Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches 1
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