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NTMD6N02R2_05

Description
3.92 A, 20 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size72KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

NTMD6N02R2_05 Overview

3.92 A, 20 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

NTMD6N02R2_05 Parametric

Parameter NameAttribute value
Number of terminals8
Minimum breakdown voltage20 V
Processing package description铅 FREE, CASE 751-07, SO-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODES
Number of components2
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current3.92 A
Rated avalanche energy360 mJ
Maximum drain on-resistance0.0350 ohm
Maximum leakage current pulse30 A
NTMD6N02R2
Power MOSFET
6.0 Amps, 20 Volts
N−Channel Enhancement Mode
Dual SO−8 Package
http://onsemi.com
Features
V
DSS
20 V
R
DS(ON)
TYP
35 mW @ V
GS
= 4.5 V
I
D
MAX
6.0 A
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SOIC−8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SOIC−8 Mounting Information Provided
Pb−Free Package is Available
N−Channel
D
G
S
Applications
DC−DC Converters
Low Voltage Motor Control
Power Management in Portable and Battery−Powered Products,
for example, Computers, Printers, Cellular and Cordless Telephones
and PCMCIA Cards
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
Gate−to−Source Voltage − Continuous
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance,
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
Thermal Resistance
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 70°C
Pulsed Drain Current (Note 4)
Symbol
V
DSS
V
DGR
V
GS
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
Value
20
20
"12
62.5
2.0
6.5
5.5
50
102
1.22
5.07
4.07
40
172
0.73
3.92
3.14
30
Unit
V
V
V
°C/W
W
A
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
8
1
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM
& PIN ASSIGNMENT
Source 1
Gate 1
Source 2
Gate 2
1
2
3
4
(Top View)
E6N02 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
E6N02
ALYWG
G
8
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
ORDERING INFORMATION
Device
NTMD6N02R2
NTMD6N02R2G
Package
SOIC−8
SOIC−8
(Pb−Free)
Shipping
2500/Tape & Reel
2500/Tape & Reel
1. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.
2. Mounted onto a 2 in square FR−4 Board
(1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 10
ms,
Duty Cycle = 2%.
©
Semiconductor Components Industries, LLC, 2005
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NTMD6N02R2/D
August, 2005 − Rev. 3
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