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2SB772GR

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size579KB,5 Pages
ManufacturerWeitron Technology
Websitehttp://weitron.com.tw/
Download Datasheet Parametric Compare View All

2SB772GR Overview

Transistor

2SB772GR Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SB772
2SD882
PNP / NPN Epitaxial Planar Transistors
P b
Lead(Pb)-Free
TO-126
1.EMITTER
2.COLLECTOR
3.BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
(1)
Base Current
Total Cevice Disspation Ta=25°C
Total Cevice Disspation Tc=25°C
Junction Temperature
Storage, Temperture
Symbol
V
CEO
V
CBO
V
EBO
I
C(DC)
I
C(Pulse)
I
B(Pulse)
P
D
P
D
T
j
Tstg
PNP/2SB772
-30
-40
-5.0
-3.0
-7.0
-0.6
1.0
10
NPN/2SD882
30
40
5.0
3.0
7.0
0.6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W
°C
°C
150
-55 to +150
Device Marking
2SB772=B772 , 2SD882=D882
ELECTORICAL CHARACTERISTICS
Characteristics
Collect-Emitter Breakdown Voltage (I
C
=-10/10 mAdc, I
B
=0)
Collect-Base Breakdown Voltage (I
C
=-100/100 µAdc, I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=-100/100 µAdc, I
C
=0)
Collector Cutoff Current (V
CE
=-30/30 Vdc, I
B
=0)
Collector Cutoff Current (V
CB
=-40/40 Vdc, I
E
=0)
Emitter Cutoff Current (V
EB
=-6.0/6.0Vdc, I
C
=0)
NOTE: 1.PW
350us, duty cycle
2%
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CBO
I
EBO
Min
-30/30
-40/40
-5.0/5.0
-
-
-
Max
-
-
-
-1.0/1.0
-1.0/1.0
-1.0/1.0
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
µAdc
WEITRON
http://www.weitron.com.tw
1/5
Rev.B 14-Aug-07

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Reach Compliance Code unknow unknow unknow unknow unknow unknow
Base Number Matches 1 1 1 1 1 1
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