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SS9011GJ18Z

Description
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size65KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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SS9011GJ18Z Overview

Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

SS9011GJ18Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)72
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)370 MHz
SS9011
NPN EPITAXIAL SILICON TRANSISTOR
AM CONVERTER, AM/FM IF AMPLIFIER
GENERAL PURPOSE TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
50
30
5
30
400
150
-55 ~ 150
Unit
V
V
V
mA
mw
°C
°C
TO-92
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
C
OB
f
T
NF
Test Conditions
I
C
= 100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 50V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 5V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 5V, I
C
= 1mA
V
CB
= 10V, I
E
= 0
f = 1MHz
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 1.0 mA
f=1MHz, R
S
= 500Ω
Min
50
30
5
100
100
198
0.3
0.75
Typ
Max
Unit
V
V
V
nA
nA
V
V
pF
MHz
dB
28
0.65
150
90
0.08
0.7
1.5
370
2.0
4.0
h
FE
CLASSIFICATION
Classification
h
FE
D
28-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
Rev. B
©1999
Fairchild Semiconductor Corporation

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