Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
| Parameter Name | Attribute value |
| Maker | SAMSUNG |
| Parts packaging code | TO-3P |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| Other features | HIGH SPEED SWITCHING |
| Maximum collector current (IC) | 32 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 149 ns |
| Nominal on time (ton) | 40 ns |
京公网安备 11010802033920号
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