Ordering number : EN8158B
2SK3666
SANYO Semiconductors
DATA SHEET
2SK3666
Applications
•
Low-Frequency General-Purpose Amplifier,
Impedance Converter Applications
N-Channel Junctin Silicon FET
Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications
Features
•
•
Small IGSS
Small Ciss
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Conditions
Ratings
30
--30
10
10
200
150
--55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Package Dimensions
unit : mm (typ)
7013A-011
2.9
3
0.1
Product & Package Information
• Package
: CP
• JEITA, JEDEC
: SC-59, TO-236, SOT-23, TO-236AB
• Minimum Packing Quantity : 3,000 pcs./reel
2SK3666-2-TB-E
2SK3666-3-TB-E
2SK3666-4-TB-E
0.5
Packing Type: TL
Marking
LOT No.
LOT No.
2.5
1.5
JK
RANK
0.5
1
0.95
2
TB
0.4
1 : Source
2 : Drain
3 : Gate
SANYO : CP
Electrical Connection
3
0.05
1.1
0.3
1
2
http://semicon.sanyo.com/en/network
62012 TKIM/D2805GM IMMS TB-00001984 / 31505GB TSIM TA-100303 No.8158-1/6
2SK3666
Electrical Characteristics
at Ta=25°C
Parameter
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)GDS
IGSS
VGS(off)
IDSS
|
yfs
|
Ciss
Crss
RDS(on)
Conditions
IG=--10μA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=1μA
VDS=10V, VGS=0V
VDS=10V, VGS=0V, f=1kHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10mV,
VGS=10V
Ratings
min
--30
--1.0
--0.18
0.6*
3.0
6.5
4
1.1
200
--0.95
--2.2
6.0*
typ
max
Unit
V
nA
V
mA
mS
pF
pF
Ω
*
: The 2SK3666 is classified by IDSS as follows : (unit : mA)
Rank
IDSS
2
0.6 to 1.5
3
1.2 to 3.0
4
2.5 to 6.0
Ordering Information
Device
2SK3666-2-TB-E
2SK3666-3-TB-E
2SK3666-4-TB-E
Package
CP
CP
CP
Shipping
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
Pb Free
memo
5.0
ID -- VDS
5
ID -- VDS
4.0
4
Drain Current, ID -- mA
Drain Current, ID -- mA
VGS=0V
3
3.0
VGS=0V
2.0
--0.1V
--0.2V
--0.1V
2
--0.2V
1
1.0
--0.3V
--0.4V
--0.3V
--0.4V
0
0
1.0
2.0
3.0
4.0
5.0
ITR00633
8
0
0
5
10
15
20
25
30
ITR00634
5
Drain-to-Source Voltage, VDS -- V
ID -- VGS
Drain-to-Source Voltage, VDS -- V
ID -- VGS
VDS=10V
VDS=10V
4
Drain Current, ID -- mA
6
Ta
=
4
--2
5
°
C
3
=5
SS
ID
A
.0m
m
3.0
A
A
0
0
2
2
C
75
°
°
C
25
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
1
1.0m
--1.50
--1.25
--1.00
--0.75
--0.50
--0.25
0
0
ITR00636
Gate-to-Source Voltage, VGS -- V
ITR00635
Gate-to-Source Voltage, VGS -- V
No.8158-2/6
Drain Current, ID -- mA
2SK3666
5
VGS(off) -- IDSS
Forward Transfer Admittance,
|
y
fs
|
-- mS
VDS=10V
ID=1.0
μ
A
2
|
y
fs
|
-- ID
VDS=10V
f=1kHz
3
Cutoff Voltage, VGS(off) -- V
3
2
10
7
5
3
2
A
5.0m
A
.0m
.0
=1
SS
ID
mA
--1.0
7
5
1.0
7
5
3
2
0.1
2
3
5
7
2
3
5
7 10
2
3
3
2
5
7
1.0
2
3
5
7
10
2
ITR00637
1.0
Drain Current, IDSS -- mA
3
|
y
fs
|
-- IDSS
Drain Current, ID -- mA
100n
ITR00638
IGDL -- VDS
Forward Transfer Admittance,
|
y
fs
|
-- mS
Gate-to-Drain Leak Current, IGDL -- A
2
VDS=10V
VGS=0V
f=1kHz
3
10n
3
1n
3
100p
3
10p
3
1p
5
IGDL
G
D
S
ID
DC
DC
10
7
5
3
2
1.0
ID=1mA
0
5
10
15
20
25
ITR00640
5
7
1.0
2
3
5
7
10
2
ITR00639
Drain Current, IDSS -- mA
5
3
Drain-to-Source Voltage, VDS -- V
10
7
Ciss -- VDS
VGS=0V
f=1MHz
Output Capacitance, Crss -- pF
Crss -- VDS
VGS=0V
f=1MHz
Input Capacitance, Ciss -- pF
5
3
2
2
10
7
5
1.0
7
5
3
3
2
1.0
7
1.0
2
3
5
7
10
2
3
5
7
2
7
1.0
2
3
5
7
10
2
3
5
7
Drain-to-Source Voltage, VDS -- V
240
ITR00641
PD -- Ta
Drain-to-Source Voltage, VDS -- V
ITR00642
Allowable Power Dissipation, PD -- mW
200
160
120
80
40
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°
C
ITR00646
No.8158-3/6
2SK3666
Embossed Taping Specification
2SK3666-2-TB-E, 2SK3666-3-TB-E, 2SK3666-4-TB-E
No.8158-4/6
2SK3666
Outline Drawing
2SK3666-2-TB-E, 2SK3666-3-TB-E, 2SK3666-4-TB-E
Mass (g) Unit
0.013 mm
* For reference
Land Pattern Example
Unit: mm
0.8
1.0
2.4
0.95
0.95
No.8158-5/6
京公网安备 11010802033920号
EEWORLD
